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TPIC2401KTA

Texas Instruments

TPIC2401KTA by Texas Instruments

TPIC2401KTA by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 6A Max Pulsed Drain Current, and 0.36ohm Max Drain-Source Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,528 parts In-Stock

1+ parts

-

100+ parts

$1.430

1k+ parts

$1.280

10k+ parts

$1.210

1,528

-

$1.430

$1.280

$1.210

DigiKey

USA . 1,528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.660

10k+ parts

-

1,528

-

-

$1.660

-

Verical

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.600

10k+ parts

$1.512

1,500

-

-

$1.600

$1.512

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,931 parts In-Stock

1+ parts

$1.520

100+ parts

-

1k+ parts

-

10k+ parts

-

4,931

$1.520

-

-

-

Vyrian

USA . 4,386 parts In-Stock

1+ parts

$1.600

100+ parts

-

1k+ parts

-

10k+ parts

-

4,386

$1.600

-

-

-

DigiKey Marketplace

USA . 1,528 parts In-Stock

1+ parts

-

100+ parts

$1.660

1k+ parts

-

10k+ parts

-

1,528

-

$1.660

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,884 parts In-Stock

1+ parts

$0.457

100+ parts

-

1k+ parts

$1.608

10k+ parts

-

1,884

$0.457

-

$1.608

-

DigiPath Technology Company

USA . 886 parts In-Stock

1+ parts

$0.503

100+ parts

$0.463

1k+ parts

-

10k+ parts

-

886

$0.503

$0.463

-

-

ChromeModa Solutions

Germany . 977 parts In-Stock

1+ parts

$0.513

100+ parts

$0.421

1k+ parts

-

10k+ parts

-

977

$0.513

$0.421

-

-

IDEA Electronic Components Group

UK . 380 parts In-Stock

1+ parts

$0.513

100+ parts

-

1k+ parts

$0.462

10k+ parts

-

380

$0.513

-

$0.462

-

Ampacity Inc.

Singapore . 1,234 parts In-Stock

1+ parts

$1.360

100+ parts

-

1k+ parts

-

10k+ parts

-

1,234

$1.360

-

-

-

Corphita

USA . 3,733 parts In-Stock

1+ parts

$1.440

100+ parts

-

1k+ parts

-

10k+ parts

-

3,733

$1.440

-

-

-

Assy Fe

Spain . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Overview

Upgrade your power management with the TPIC2401KTA by Texas Instruments. Crafted by industry leader Texas Instruments, this N-channel Power FET offers reliable performance for a variety of switching applications. With its advanced features and durable construction, this complex transistor maximizes efficiency and minimizes power loss. Whether you're looking to enhance your electronic designs or optimize your power systems, the TPIC2401KTA delivers exceptional quality and value. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications while ensuring longevity.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically offer higher mobility of charge carriers and lower ON-resistance, making them more efficient for switching applications.

Configuration: COMPLEX

The complex configuration allows for versatile use in different circuit designs, making the product adaptable to various requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliability in control circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low output impedance, enhancing overall circuit efficiency and performance.

Maximum Power Dissipation (Abs): 1.7 W

The low power dissipation rating ensures minimal heat generation, contributing to the product's reliability and longevity.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the product can withstand elevated temperatures without compromising performance.

Technical Specifications

Power Field Effect Transistors (FET) TPIC2401KTA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ESD PROTECTED

Avalanche Energy Rating (EAS):

36 mJ

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

1.5 A

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G9

No. of Elements:

4

No. of Terminals:

9

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

6 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC2401KTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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