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TPIC2601KTC

Texas Instruments

TPIC2601KTC by Texas Instruments

TPIC2601KTC by Texas Instruments is a N-CHANNEL FET with 6 elements, built-in diode, and 60V DS breakdown voltage. Commonly used in power applications due to its 10A pulsed drain current, 105mJ avalanche energy rating, and 0.3 ohm max on-resistance. Ideal for enhancing performance in high-power circuits.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 5,361 parts In-Stock

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Digiode

USA . 3,677 parts In-Stock

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NexGen Digital

USA . 16 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Parana Technologies

USA . 869 parts In-Stock

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$0.546

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$1.650

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869

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DigiPath Technology Company

USA . 2,234 parts In-Stock

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$0.602

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$0.554

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ChromeModa Solutions

Germany . 4,630 parts In-Stock

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$0.614

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$0.503

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IDEA Electronic Components Group

UK . 443 parts In-Stock

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$0.553

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AZTECH Wire

Italy . 397 parts In-Stock

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$19.819

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One Stop Electronics

USA . 1,114 parts In-Stock

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$30.050

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GreenTree Electronics

Israel . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,207 parts In-Stock

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Corphita

USA . 4,627 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 3,070 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Overview

Unleash the power of innovation with the TPIC2601KTC from Texas Instruments. Designed with precision and excellence, this Power Field Effect Transistor offers unparalleled performance and reliability for a wide range of applications. Whether you're in need of common source configuration or looking for enhanced mode operation, this transistor has got you covered. With a maximum pulsated drain current of 10A and an avalanche energy rating of 105mJ, the TPIC2601KTC delivers exceptional value and efficiency. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations. Elevate your projects with the TPIC2601KTC today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance compared to P-channel FETs, making them more efficient for certain applications.

Configuration: COMMON SOURCE, 6 ELEMENTS WITH BUILT-IN DIODE

The presence of 6 elements with a built-in diode allows for improved efficiency and functionality in various circuit designs.

Surface Mount: YES

The ability to be surface mounted makes installation and integration of the FET easier and more convenient.

Minimum DS Breakdown Voltage: 60 V

The high minimum breakdown voltage ensures reliable operation, even in high voltage applications.

Maximum Pulsed Drain Current (IDM): 10 A

The high maximum pulsed drain current allows the FET to handle sudden spikes in current, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 1.7 W

With a maximum power dissipation of 1.7 W, this FET can handle moderate power loads while maintaining efficiency.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the FET to operate reliably under elevated temperatures, increasing its versatility.

Technical Specifications

Power Field Effect Transistors (FET) TPIC2601KTC attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ESD PROTECTED

Avalanche Energy Rating (EAS):

105 mJ

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-G15

No. of Elements:

6

No. of Terminals:

15

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

TPIC2601KTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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