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TPIC1301DWR

Texas Instruments

TPIC1301DWR by Texas Instruments

TPIC1301DWR by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has 6 elements, 11.25A IDM, and 17.2mJ EAS rating. With a max power dissipation of 1.39W and operating temp up to 150°C, it offers fast switching with low 0.275 ohm RDS(on).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,659 parts In-Stock

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4,659

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Digiode

USA . 4,376 parts In-Stock

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4,376

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Distributors (Availability)

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Parana Technologies

USA . 2,359 parts In-Stock

1+ parts

$0.455

100+ parts

-

1k+ parts

$1.608

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-

2,359

$0.455

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$1.608

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DigiPath Technology Company

USA . 1,001 parts In-Stock

1+ parts

$0.501

100+ parts

$0.461

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-

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1,001

$0.501

$0.461

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ChromeModa Solutions

Germany . 3,229 parts In-Stock

1+ parts

$0.511

100+ parts

$0.419

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3,229

$0.511

$0.419

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IDEA Electronic Components Group

UK . 2,126 parts In-Stock

1+ parts

$0.511

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$0.460

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2,126

$0.511

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$0.460

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AZTECH Wire

Italy . 563 parts In-Stock

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$8.394

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563

$8.394

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One Stop Electronics

USA . 944 parts In-Stock

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$14.050

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944

$14.050

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Semicontronic

India . 1,195 parts In-Stock

1+ parts

$53.050

100+ parts

$51.724

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$51.458

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1,195

$53.050

$51.724

$51.458

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Ampacity Inc.

Singapore . 1,526 parts In-Stock

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$58.050

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1,526

$58.050

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Corphita

USA . 3,403 parts In-Stock

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3,403

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Corohmni

South Africa . 328 parts In-Stock

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Overview

Experience the power and efficiency of the Texas Instruments TPIC1301DWR Power Field Effect Transistor. With a reputation for excellence in semiconductor technology, Texas Instruments delivers top-of-the-line products that exceed industry standards. Ideal for switching applications, this N-CHANNEL transistor offers superior performance and reliability. From its high DS Breakdown Voltage to its low on-resistance, this transistor provides unmatched value and benefits to customers looking for quality components. Trust Texas Instruments to elevate your projects with the TPIC1301DWR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance than P-channel FETs, making this product a suitable choice for various applications.

Transistor Application: SWITCHING

Designed for switching applications, this FET can handle fast switching speeds and high-frequency operation efficiently.

Surface Mount: YES

Being surface mountable, this FET can be easily mounted on PCBs, saving space and providing a more efficient design.

Maximum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can withstand higher voltages, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 11.25 A

Capable of handling high pulsed drain currents, this FET is ideal for applications requiring short bursts of high current.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can operate reliably in various environments without overheating.

Maximum Turn On Time (ton): 80 ns

The fast turn-on time of this FET allows for quick response in switching applications, enhancing overall performance.

Technical Specifications

Power Field Effect Transistors (FET) TPIC1301DWR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ESD PROTECTED

Avalanche Energy Rating (EAS):

17.2 mJ

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.25 A

Maximum Drain-Source On Resistance:

.275 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

75 pF

JEDEC-95 Code:

MS-013AD

JESD-30 Code:

R-PDSO-G24

No. of Elements:

6

No. of Terminals:

24

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.39 W

Maximum Pulsed Drain Current (IDM):

11.25 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

65 ns

Maximum Turn On Time (ton):

80 ns

Trade Compliance

TPIC1301DWR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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