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TMS5702134DZWTQQ1

Texas Instruments

TMS5702134DZWTQQ1 by Texas Instruments

TMS5702134DZWTQQ1 by Texas Instruments is a 32-bit microcontroller with 22-bit address bus width, 64K data EEPROM size, and 24-Ch 12-Bit ADC channels. Ideal for automotive applications due to AEC-Q100 screening level, CAN(3) connectivity, and operating temperature range of -40 to 125 °C. With peripherals like DMA(16) and TIMER(45), it offers high performance at a max clock frequency of 80 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,018 parts In-Stock

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Digiode

USA . 3,485 parts In-Stock

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Ampacity Inc.

Singapore . 208 parts In-Stock

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$14.000

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$14.000

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AZTECH Wire

Italy . 640 parts In-Stock

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$14.914

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Parana Technologies

USA . 2,312 parts In-Stock

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$15.227

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$15.626

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One Stop Electronics

USA . 1,061 parts In-Stock

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$16.000

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$16.000

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Semicontronic

India . 1,002 parts In-Stock

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$16.000

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$15.600

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$15.520

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$16.000

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DigiPath Technology Company

USA . 651 parts In-Stock

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$16.767

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$15.425

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651

$16.767

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ChromeModa Solutions

Germany . 5,073 parts In-Stock

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$17.109

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$14.029

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IDEA Electronic Components Group

UK . 465 parts In-Stock

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$17.109

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$16.254

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$15.398

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Corphita

USA . 2,794 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 282 parts In-Stock

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Overview

Experience superior performance and reliability with the TMS5702134DZWTQQ1 microcontroller by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch quality and innovation in their products. This microcontroller is designed to meet the demands of various applications, offering advanced features like ADC channels, DMA channels, and a wide range of peripherals. With a maximum clock frequency of 80 MHz and extensive connectivity options, this microcontroller provides unmatched value and efficiency for your projects. Trust Texas Instruments for cutting-edge technology that delivers exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the microcontroller, making it suitable for various applications.

Maximum Supply Voltage: 1.32 V

A higher maximum supply voltage allows for flexibility in power supply options and compatibility with different systems.

Bit Size: 32

32-bit architecture enables advanced processing capabilities and supports complex operations efficiently.

ADC Channels: YES

The presence of Analog to Digital Converters allows for interfacing with analog sensors and signals, expanding the microcontroller's capabilities.

ROM Words: 2097152

Large ROM capacity provides ample space for program storage, enabling the execution of extensive code sequences.

Maximum Clock Frequency: 80 MHz

Higher clock frequency allows for faster operation and improved performance in tasks that require rapid processing.

Connectivity: CAN(3), I2C, SCI(2), SPI(5)

Multiple communication interfaces enhance connectivity options, enabling seamless integration with various networks and devices.

RAM Bytes: 262144

Generous RAM capacity supports efficient data handling and memory-intensive applications, ensuring smooth operation.

Technical Specifications

Microcontrollers TMS5702134DZWTQQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

22

Bit Size:

32

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

16 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

144

No. of Terminals:

337

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Bytes:

262144

ROM Words:

2097152

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.4 mm

Speed:

180 rpm

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(3), I2C, SCI(2), SPI(5)

Peripherals:

DMA(16), POR, TIMER(45), WDT

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TMS5702134DZWTQQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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