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TMS5701115BPGEQQ1

Texas Instruments

TMS5701115BPGEQQ1 by Texas Instruments

TMS5701115BPGEQQ1 by Texas Instruments is a 32-bit microcontroller with 1048576 ROM words, 131072 RAM bytes, and 24-Ch 12-Bit ADC channels. Ideal for automotive applications due to AEC-Q100 screening, it offers CAN, I2C, LIN connectivity and operates at up to 80 MHz clock frequency.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,783 parts In-Stock

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Digiode

USA . 935 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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One Stop Electronics

USA . 1,401 parts In-Stock

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$1.000

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AZTECH Wire

Italy . 432 parts In-Stock

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$6.253

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Ampacity Inc.

Singapore . 1,491 parts In-Stock

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Parana Technologies

USA . 791 parts In-Stock

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DigiPath Technology Company

USA . 1,191 parts In-Stock

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$55.361

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$50.932

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ChromeModa Solutions

Germany . 1,999 parts In-Stock

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$46.323

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IDEA Electronic Components Group

UK . 1,154 parts In-Stock

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$56.491

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$53.666

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$50.842

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Corphita

USA . 4,966 parts In-Stock

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Lixinc

USA . 3,277 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Microchip USA

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Overview

Experience top-of-the-line performance and reliability with the TMS5701115BPGEQQ1 microcontroller by Texas Instruments. As a leader in the industry, Texas Instruments ensures superior quality and innovation in every product they create. Ideal for automotive applications, this microcontroller offers advanced features and functionality to optimize efficiency and productivity. Trust in the value and benefits that the TMS5701115BPGEQQ1 brings to your projects, providing a seamless and powerful solution for all your microcontroller needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance between cost-effectiveness and durability, making the product suitable for a wide range of applications.

Maximum Supply Voltage: 1.32 V

Having a higher maximum supply voltage allows for flexibility in power supply options, ensuring stability in various operating conditions.

CPU Family: CORTEX-R4F

The CORTEX-R4F CPU family offers high performance and real-time capabilities, making the microcontroller suitable for demanding automotive applications.

Temperature Grade: AUTOMOTIVE

Being designated as automotive-grade ensures the product can withstand harsh operating conditions commonly found in automotive environments.

RAM Bytes: 131072

With a large RAM capacity, the microcontroller can efficiently handle complex tasks and store a significant amount of data, enhancing overall performance.

Peripheral IC Type: MICROCONTROLLER, RISC

The RISC architecture combined with a wide range of peripherals makes the microcontroller versatile and suitable for a variety of embedded system applications.

ADC Channels: YES

Having ADC channels enables the microcontroller to interface with analog sensors and signals, expanding its capabilities for data acquisition and processing.

Connectivity: CAN(3), I2C, LIN, MIBSPI(3), SCI(2), SPI

The multiple connectivity options allow for seamless communication with various external devices and systems, enhancing the microcontroller's versatility and integration capabilities.

Technical Specifications

Microcontrollers TMS5701115BPGEQQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G144

JESD-609 Code:

e4

Length:

20 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

58

No. of Terminals:

144

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP144,.87SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

131072

ROM Words:

1048576

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Speed:

160 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

350 mA

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

20 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(3), I2C, LIN, MIBSPI(3), SCI(2), SPI

Peripherals:

CAP(6), CRC(2), DMA(16), QEP(2), POR, PWM(14), TIMER(40)

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TMS5701115BPGEQQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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