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TMS320VC5510AGGWA2

Texas Instruments

TMS320VC5510AGGWA2 by Texas Instruments

TMS320VC5510AGGWA2 by Texas Instruments is a 16-bit DSP with integrated cache, 32-bit external data bus width, and max clock frequency of 50 MHz. Ideal for industrial applications requiring low power consumption and fixed-point format processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 7,447 parts In-Stock

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Digiode

USA . 588 parts In-Stock

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Chip Stock

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Lantek

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Bristol Electronics

USA . 23 parts In-Stock

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AZTECH Wire

Italy . 844 parts In-Stock

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$17.155

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One Stop Electronics

USA . 478 parts In-Stock

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$34.000

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Parana Technologies

USA . 1,794 parts In-Stock

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$57.557

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Corohmni

South Africa . 211 parts In-Stock

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DigiPath Technology Company

USA . 1,324 parts In-Stock

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$63.378

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$58.307

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ChromeModa Solutions

Germany . 1,824 parts In-Stock

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$64.671

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$53.030

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IDEA Electronic Components Group

UK . 1,505 parts In-Stock

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Lixinc

USA . 3,516 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Corphita

USA . 2,437 parts In-Stock

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Perfect Parts

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Microchip USA

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Overview

Experience unparalleled performance and efficiency with the TMS320VC5510AGGWA2 by Texas Instruments, a leading manufacturer in the field of Digital Signal Processors (DSPs). This cutting-edge product boasts integrated cache, low power mode, and a wide array of applications in industries such as telecommunications, audio processing, and consumer electronics. With a maximum clock frequency of 50 MHz and a temperature grade of industrial, this DSP delivers exceptional value, reliability, and versatility to customers seeking top-tier solutions for their signal processing needs. Elevate your projects to new heights with the TMS320VC5510AGGWA2 - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the DSP.

Integrated Cache: YES

Improves processing speed and efficiency by storing frequently accessed data.

Maximum Supply Voltage: 1.65 V

Allows for reliable operation within specified voltage range.

On Chip Data RAM Width: 16

Provides ample memory space for data processing and storage.

Address Bus Width: 22

Supports large address space for memory access and data transfer.

Maximum Operating Temperature: 85 °C

Ensures stable performance in a wide range of environmental conditions.

No. of Terminals: 240

Offers flexibility for connecting external devices and peripherals.

RAM Words: 163840

Provides extensive memory storage for program execution and data processing.

Maximum Clock Frequency: 50 MHz

Enables fast processing speeds for real-time applications.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Designed specifically for digital signal processing tasks, ensuring optimized performance.

Technical Specifications

Digital Signal Processors (DSPs) TMS320VC5510AGGWA2 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 3.3V SUPPLY

Address Bus Width:

22

Barrel Shifter:

NO

Bit Size:

16

Boundary Scan:

YES

Maximum Clock Frequency:

50 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B240

JESD-609 Code:

e0

Length:

15 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

6

No. of External Interrupts:

6

No. of Terminals:

240

No. of Timers:

2

On Chip Data RAM Width:

16

On Chip Program ROM Width:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA240,17X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

220

Power Supplies (V):

1.6,3.3

Qualification:

Not Qualified

RAM Words:

163840

ROM Programmability:

MROM

Maximum Seated Height:

1.4 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Current:

8 mA

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.55 V

Nominal Supply Voltage:

1.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

15 mm

Peripheral IC Type:

Trade Compliance

TMS320VC5510AGGWA2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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