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TMS320DM647ZUT1

Texas Instruments

TMS320DM647ZUT1 by Texas Instruments

TMS320DM647ZUT1 by Texas Instruments is a 32-bit DSP with max clock freq of 1100 MHz. It has 8192 RAM words, operates at -40 to 90°C, and is used in digital signal processing applications.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 3,273 parts In-Stock

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Vyrian

USA . 2,269 parts In-Stock

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AZTECH Wire

Italy . 746 parts In-Stock

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$16.917

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One Stop Electronics

USA . 956 parts In-Stock

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$21.000

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Corohmni

South Africa . 2,641 parts In-Stock

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Parana Technologies

USA . 2,228 parts In-Stock

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DigiPath Technology Company

USA . 705 parts In-Stock

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$54.829

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$50.443

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IDEA Electronic Components Group

UK . 2,073 parts In-Stock

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$55.948

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$53.151

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$50.353

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ChromeModa Solutions

Germany . 1,151 parts In-Stock

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Component Stockers USA

USA . 458 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 2,784 parts In-Stock

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Corphita

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Benley Electronics

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Microchip USA

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Overview

Experience the next level of digital signal processing with the TMS320DM647ZUT1 by Texas Instruments. Crafted with precision and expertise, this DSP offers unparalleled performance and reliability for a wide range of applications. From advanced audio processing to high-speed communications, this versatile device is designed to deliver exceptional quality and efficiency. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations. Elevate your projects with the TMS320DM647ZUT1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic materials are cost-effective and can offer good physical protection for the internal components of the DSP.

Maximum Supply Voltage: 1.26 V

Allows for efficient power management and ensures optimal performance without exceeding voltage limits.

Bit Size: 32

A 32-bit architecture enables high computational efficiency and precision in signal processing tasks.

Maximum Clock Frequency: 1100 MHz

High clock frequency enables fast data processing and efficient execution of algorithms.

RAM Words: 8192

Ample RAM storage capacity ensures sufficient memory for processing complex digital signals and data.

Technology: CMOS

CMOS technology offers low power consumption and high integration density, making the DSP efficient and compact.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM647ZUT1 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 OR 1.8 V FOR I/O SUPPLY

Address Bus Width:

32

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

1100 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B529

JESD-609 Code:

e1

Length:

19 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

529

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA529,23X23,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

245

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

Maximum Seated Height:

3.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

19 mm

Peripheral IC Type:

Trade Compliance

TMS320DM647ZUT1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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