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TLS2110DWR

Texas Instruments

TLS2110DWR by Texas Instruments

The Texas Instruments TLS2110DWR is a drive electronics IC with 4 channels, operating at 5V nominal voltage. It features a small outline package style, Gull Wing terminal form, and operates in commercial temperature grade. Ideal for use in Winchester drives as read-write amplifier circuit with surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,067 parts In-Stock

1+ parts

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7,067

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Digiode

USA . 1,965 parts In-Stock

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1,965

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 456 parts In-Stock

1+ parts

$5.478

100+ parts

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456

$5.478

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Parana Technologies

USA . 938 parts In-Stock

1+ parts

$6.335

100+ parts

-

1k+ parts

$7.085

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938

$6.335

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$7.085

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ChromeModa Solutions

Germany . 5,437 parts In-Stock

1+ parts

$7.118

100+ parts

$5.837

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5,437

$7.118

$5.837

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IDEA Electronic Components Group

UK . 1,865 parts In-Stock

1+ parts

$7.118

100+ parts

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1k+ parts

$6.406

10k+ parts

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1,865

$7.118

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$6.406

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One Stop Electronics

USA . 1,564 parts In-Stock

1+ parts

$24.500

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1,564

$24.500

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Corphita

USA . 3,757 parts In-Stock

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3,757

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DigiPath Technology Company

USA . 2,103 parts In-Stock

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$6.418

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2,103

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$6.418

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Overview

Experience unparalleled quality and reliability with the TLS2110DWR by Texas Instruments. As a leading manufacturer in drive electronics, Texas Instruments delivers cutting-edge technology for various applications. This small outline package offers 4 channels of read-write amplifier circuit, making it perfect for Winchester drives. With a wide supply voltage range and commercial temperature grade, this product ensures optimal performance in any environment. Trust Texas Instruments to provide superior products that bring value and benefits to customers, setting new standards in drive electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components, ensuring the product's longevity.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into various electronic systems without the need for through-hole mounting, saving space and improving manufacturing efficiency.

Maximum Supply Voltage: 5.25 V

The high maximum supply voltage of 5.25V ensures compatibility with a wide range of power sources, making this product versatile and suitable for different applications.

No. of Channels: 4

Having 4 channels allows for multiple inputs and outputs, enabling the drive electronics to handle more complex tasks and data processing efficiently.

Technology: BIPOLAR

The bipolar technology used in this product offers high switch speeds and low noise levels, making it ideal for high-performance drive applications where precision and speed are essential.

Technical Specifications

Drive Electronics TLS2110DWR attributes and parameters. Explore more Drive Electronics devices from Texas Instruments

Specs

Drive Type:

WINCHESTER

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

Length:

12.8 mm

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.25 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

TLS2110DWR Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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