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LV8212T

Onsemi

LV8212T by Onsemi

LV8212T by Onsemi is a CD motor driver with 5 channels, BICMOS technology, and 64 terminals in a low profile flatpack. It operates b/w -30 to 85 °C, suitable for drive electronics applications requiring precise control at supply voltages ranging from 3.3V to 5.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,168 parts In-Stock

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Digiode

USA . 1,704 parts In-Stock

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SupplyDigital Components

Austria . 6,732 parts In-Stock

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TANS Electronics

Latvia . 6,596 parts In-Stock

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Kulean Microsystems

USA . 4,775 parts In-Stock

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UHIMA Technologies

Türkiye . 912 parts In-Stock

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Corohmni

South Africa . 293 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 41 parts In-Stock

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Overview

Enhance your electronic projects with the LV8212T by Onsemi, a top-quality drive electronics component that offers unrivaled performance and reliability. Manufactured by industry leader Onsemi, this CD motor driver boasts a range of applications in various industries. With its sleek design and advanced technology, the LV8212T provides customers with exceptional value, efficiency, and ease of use. Upgrade your projects today with the LV8212T and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances the durability and longevity of the drive electronics.

Surface Mount: YES

Being surface-mountable makes it easier to integrate the drive electronics into compact electronic devices.

Maximum Supply Voltage: 5.5 V

The maximum supply voltage of 5.5V allows for compatibility with a wide range of power sources.

Package Shape: SQUARE

The square package shape helps in efficient PCB layout and space utilization.

No. of Terminals: 64

Having 64 terminals provides ample connectivity options for various components and peripherals.

Minimum Supply Voltage: 3.3 V

The minimum supply voltage of 3.3V ensures reliable operation even at lower power levels.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the drive electronics can withstand high-temperature environments.

Minimum Operating Temperature: -30 °C

The drive electronics can also function effectively in extremely low-temperature conditions down to -30 °C.

Terminal Position: QUAD

The quad terminal position allows for secure and stable connections, reducing the risk of disconnections.

Maximum Seated Height: 1.2 mm

The low maximum seated height of 1.2mm enables a compact and slim profile for the overall device.

Width: 7 mm

The 7mm width contributes to the compact size and form factor of the drive electronics.

Length: 7 mm

The 7mm length complements the square package shape, making it ideal for space-constrained applications.

Temperature Grade: COMMERCIAL EXTENDED

The commercial extended temperature grade ensures reliable performance in a wide range of commercial environments.

No. of Channels: 5

With 5 channels, the drive electronics can control and manage multiple components simultaneously, enhancing efficiency.

Technology: BICMOS

The use of BICMOS technology combines the benefits of both Bipolar and CMOS technologies, offering high-speed performance and low power consumption.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical strength and ease of soldering during the assembly process.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V ensures stable and consistent power delivery to the drive electronics.

Terminal Pitch: 0.4 mm

The small terminal pitch of 0.4mm allows for high-density mounting and efficient use of PCB space.

Interface IC Type: CD MOTOR DRIVER

The CD motor driver interface IC type indicates that the drive electronics are specifically designed for controlling CD motors, making them a perfect choice for CD player applications.

Technical Specifications

Drive Electronics LV8212T attributes and parameters. Explore more Drive Electronics devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

S-PQFP-G64

Length:

7 mm

No. of Channels:

5

No. of Functions:

1

No. of Terminals:

64

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TQFP64,.35SQ,16

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3.3 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

7 mm

Trade Compliance

LV8212T Interface ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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