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TISP2260F3DR

Texas Instruments

TISP2260F3DR by Texas Instruments

TISP2260F3DR by Texas Instruments is a Silicon Surge Protector with 4A Non Repetitive Peak On-state Current, 200V Max DC Off-state Voltage, and 260V Max Breakdown Voltage. It is used for surge protection in various applications due to its Delta Connected configuration and UL Recognized reference standard.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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R&J Components

USA . 45,585 parts In-Stock

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Bristol Electronics

USA . 27,499 parts In-Stock

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27,499

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Vyrian

USA . 7,712 parts In-Stock

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Sogenti Electronics

Canada . 5,861 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,000 parts In-Stock

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Digiode

USA . 3,106 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 778 parts In-Stock

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778

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Distributors (Availability)

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One Stop Electronics

USA . 1,577 parts In-Stock

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$2.100

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$2.100

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Parana Technologies

USA . 1,338 parts In-Stock

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$3.596

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$4.112

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$3.596

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$4.112

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DigiPath Technology Company

USA . 10 parts In-Stock

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$3.959

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$3.642

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10

$3.959

$3.642

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IDEA Electronic Components Group

UK . 2,006 parts In-Stock

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$4.040

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$3.636

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$4.040

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ChromeModa Solutions

Germany . 618 parts In-Stock

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$4.040

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$3.313

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618

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AZTECH Wire

Italy . 850 parts In-Stock

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$7.173

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Perfect Parts

USA . 23,399 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 10,446 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,709 parts In-Stock

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Assy Fe

Spain . 5,305 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 4,633 parts In-Stock

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Overview

Protect your electronic devices and equipment with the TISP2260F3DR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This silicon surge protector is designed for maximum protection against power surges, ensuring the safety of your valuable electronics. With its compact package style and surface mount design, it is easy to install and perfect for a wide range of applications. Trust Texas Instruments to provide you with the best surge protection for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the internal components of the surge protector.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta connected configuration with 3 elements provides efficient protection against surges and ensures stability in electrical circuits.

Non Repetitive Peak On-state Current: 4 A

The high non-repetitive peak on-state current rating of 4A allows the surge protector to handle transient overvoltage conditions effectively.

Surface Mount: YES

Being surface mountable makes installation of the surge protector convenient and suitable for space-saving applications.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of mounting and integration into various electronic systems.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connection and reliable performance of the surge protector.

Maximum DC Off-state Voltage: 200 V

With a maximum DC off-state voltage of 200V, this surge protector can effectively protect devices from high voltage spikes.

Trigger Device Type: SILICON SURGE PROTECTOR

The use of silicon surge protector as the trigger device ensures fast response time and effective surge suppression capabilities.

Maximum Breakdown Voltage: 260 V

The high maximum breakdown voltage rating of 260V ensures strong protection against overvoltage events in the electrical system.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that this surge protector meets the safety and performance standards set by Underwriters Laboratories, ensuring reliability and quality.

Technical Specifications

Silicon Surge Protectors TISP2260F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

260 V

Maximum DC Off-state Voltage:

200 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP2260F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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