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TISP3180

Texas Instruments

TISP3180 by Texas Instruments

TISP3180 by Texas Instruments is a Silicon Surge Protector with 10A Non Repetitive Peak On-state Current and 180V Max Breakdown Voltage. It features SERIES CONNECTED, CENTER TAP configuration for protection against voltage surges. Ideal for applications requiring reliable surge protection in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 6,056 parts In-Stock

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Greenchips

USA . 4,909 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 4,909 parts In-Stock

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Digiode

USA . 967 parts In-Stock

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Component Sense

UK . 929 parts In-Stock

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Bristol Electronics

USA . 614 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 546 parts In-Stock

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Halfin

Belgium . 45 parts In-Stock

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Prism Electronics

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Parana Technologies

USA . 871 parts In-Stock

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$4.354

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$4.772

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871

$4.354

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DigiPath Technology Company

USA . 771 parts In-Stock

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$4.794

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ChromeModa Solutions

Germany . 4,233 parts In-Stock

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$4.892

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$4.011

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IDEA Electronic Components Group

UK . 723 parts In-Stock

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$4.892

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AZTECH Wire

Italy . 468 parts In-Stock

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$18.958

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One Stop Electronics

USA . 1,364 parts In-Stock

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$22.100

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Corphita

USA . 3,094 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 546 parts In-Stock

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Glotronic Ltd.

UK . 437 parts In-Stock

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Assy Fe

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Overview

Unleash the power of protection with the TISP3180 by Texas Instruments. Crafted with precision and expertise, this Silicon Surge Protector offers unparalleled quality and reliability. Perfect for a variety of applications, this innovative device provides peace of mind by safeguarding your electronics from unexpected power surges. Trust in Texas Instruments to deliver superior performance and exceptional value with the TISP3180.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against external elements, ensuring a longer lifespan for the surge protector.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements allows for efficient distribution of surge protection, ensuring optimal performance during power surges.

Non Repetitive Peak On-state Current: 10 A

With a peak on-state current of 10 A, this surge protector can handle high levels of current during surges, effectively safeguarding connected devices.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to install the surge protector in various electronic devices or circuit setups, providing versatile protection.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the installation process and ensures a secure connection to the circuit, enhancing the reliability of the surge protector.

No. of Elements: 2

Having 2 elements increases the overall protection capacity of the surge protector, making it suitable for safeguarding multiple electronic devices or circuits.

No. of Terminals: 3

The 3 terminals provide flexibility in connecting the surge protector to the circuit, accommodating various wiring configurations for better compatibility.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and positioning of the surge protector, ensuring a secure and stable installation in electronic devices or circuit boards.

Trigger Device Type: SILICON SURGE PROTECTOR

Being a silicon surge protector, this device offers fast response time to surges and provides reliable protection against voltage spikes, ensuring safety for connected equipment.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures a straightforward connection to the circuit, enhancing user-friendliness and convenience.

Maximum Breakdown Voltage: 180 V

With a maximum breakdown voltage of 180 V, this surge protector can effectively suppress high voltage surges, preventing damage to sensitive electronic devices and equipment.

Technical Specifications

Silicon Surge Protectors TISP3180 attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

180 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP3180 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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