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TIR1000PSRG4

Texas Instruments

TIR1000PSRG4 by Texas Instruments

TIR1000PSRG4 by Texas Instruments is a CMOS microprocessor circuit with 8 terminals, operating b/w 0-70°C. It has a supply voltage range of 2.7-3.3V and is surface mountable in a small outline package style. Ideal for commercial applications requiring compact and efficient processing capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,178 parts In-Stock

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Digiode

USA . 2,017 parts In-Stock

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Nova Conductors

Japan . 81 parts In-Stock

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Ampacity Inc.

Singapore . 471 parts In-Stock

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$2.000

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AZTECH Wire

Italy . 415 parts In-Stock

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$5.230

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One Stop Electronics

USA . 347 parts In-Stock

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$22.000

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Corohmni

South Africa . 1,203 parts In-Stock

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Parana Technologies

USA . 1,723 parts In-Stock

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$67.906

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DigiPath Technology Company

USA . 2,245 parts In-Stock

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$74.773

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ChromeModa Solutions

Germany . 6,893 parts In-Stock

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$76.299

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$62.565

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IDEA Electronic Components Group

UK . 453 parts In-Stock

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$76.299

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$72.484

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Kepictronics

USA . 10,320 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,493 parts In-Stock

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Continental Prestige Electronics

USA . 6,281 parts In-Stock

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Argo Parts USA

USA . 1,778 parts In-Stock

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Microchip USA

USA . 1,445 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 870 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TIR1000PSRG4 by Texas Instruments. Crafted with precision and expertise, this peripheral IC offers unparalleled performance and reliability for a wide range of applications. From microprocessor circuits to other function uPs,uCs, this small outline package is designed to enhance efficiency and productivity. With a nominal supply voltage of 3V and a maximum operating temperature of 70°C, this versatile component provides exceptional value and benefits to customers looking for quality solutions. Experience innovation at its finest with the TIR1000PSRG4 from Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly, making this product convenient for manufacturing processes.

Shielded: YES

The shielded construction helps to prevent electromagnetic interference, ensuring reliable performance in sensitive electronic applications.

Terminal Placement: DUAL ENDED

Dual-ended terminals provide flexibility in circuit design and allow for easy connection to other components.

Nominal Inductance (L): 18 uH

With a nominal inductance of 18 uH, this inductor is suitable for power applications where a moderate level of inductance is required.

Maximum Rated Current: 3.3 A

The high maximum rated current allows for efficient power handling, making this inductor ideal for applications that require high current capabilities.

Core Material: FERRITE

Ferrite core material provides high magnetic permeability, making this inductor suitable for high-frequency applications and minimizing energy losses.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs TIR1000PSRG4 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

CAN ALSO OPERATE AT 5V SUPPLY

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

6.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.3 mm

Peripheral IC Type:

Trade Compliance

TIR1000PSRG4 Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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