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TCM5089J

Texas Instruments

TCM5089J by Texas Instruments

Texas Instruments TCM5089J is a CMOS Telephone Line IC with 16 terminals in an IN-LINE package. Operating temperature range from -40 to 85 °C, crystal frequency of 3.58 MHz. Ideal for industrial applications requiring low supply current and dual terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,749 parts In-Stock

1+ parts

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4,749

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Vyrian

USA . 3,276 parts In-Stock

1+ parts

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3,276

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 114 parts In-Stock

1+ parts

$6.509

100+ parts

-

1k+ parts

$7.251

10k+ parts

-

114

$6.509

-

$7.251

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ChromeModa Solutions

Germany . 3,654 parts In-Stock

1+ parts

$7.313

100+ parts

$5.997

1k+ parts

-

10k+ parts

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3,654

$7.313

$5.997

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IDEA Electronic Components Group

UK . 203 parts In-Stock

1+ parts

$7.313

100+ parts

-

1k+ parts

$6.582

10k+ parts

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203

$7.313

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$6.582

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AZTECH Wire

Italy . 862 parts In-Stock

1+ parts

$17.603

100+ parts

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862

$17.603

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One Stop Electronics

USA . 357 parts In-Stock

1+ parts

$904.000

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357

$904.000

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Corphita

USA . 1,620 parts In-Stock

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1,620

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DigiPath Technology Company

USA . 1,524 parts In-Stock

1+ parts

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100+ parts

$6.593

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1,524

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$6.593

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Overview

Enhance your communication devices with the TCM5089J from Texas Instruments. Crafted with premium quality and cutting-edge technology, this telephone line IC is designed to elevate performance and reliability. Whether you're looking to upgrade your existing system or develop new applications, this product offers unparalleled value and benefits. Trust in the expertise of Texas Instruments and experience seamless connectivity like never before. Elevate your communication experience with the TCM5089J today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity and stability, making it suitable for industrial applications where temperature fluctuations are common.

Power Supplies (V): 3/10

Offers a wide range of power supply options, allowing for flexibility in various operating conditions and power requirements.

No. of Terminals: 16

Sufficient number of terminals for connecting various components and interfaces, enabling versatile functionality and integration.

Terminal Position: DUAL

Dual terminal position allows for increased connectivity options and versatile circuit designs, enhancing overall product functionality.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring efficient and reliable performance of the product.

Maximum Supply Current: 0.002 mA

Low maximum supply current minimizes power consumption, making the product energy-efficient and cost-effective for long-term use.

Crystal Frequency (MHz): 3.58

Crystal frequency of 3.58 MHz provides accurate timing and synchronization, essential for telephone line ICs to maintain proper communication protocols.

Technical Specifications

Telephone Line ICs TCM5089J attributes and parameters. Explore more Telephone Line ICs devices from Texas Instruments

Specs

Crystal Frequency (MHz):

3.58

JESD-30 Code:

R-XDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/10

Qualification:

Not Qualified

Sub-Category:

Telephone Circuits

Maximum Supply Current:

.002 mA

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TCM5089J Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-219-8836, 5962012198836

NIIN

012198836

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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