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SNJ54BCT646JT

Texas Instruments

SNJ54BCT646JT by Texas Instruments

SNJ54BCT646JT by Texas Instruments is an 8-bit bus driver with a propagation delay of 10.5 ns and operates at a nominal voltage of 5V. It features a MIL-PRF-38535 screening level, suitable for military-grade applications requiring true output polarity and independent control in a compact rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,950 parts In-Stock

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Vyrian

USA . 3,710 parts In-Stock

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Electronic Expediters

USA . 41 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 38 parts In-Stock

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Electro Mavin

USA . 6 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 1,859 parts In-Stock

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$3.666

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$3.519

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$3.519

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$3.519

$3.519

Parana Technologies

USA . 72 parts In-Stock

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$8.482

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$9.135

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72

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ChromeModa Solutions

Germany . 1,166 parts In-Stock

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$9.530

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$7.815

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$9.530

$7.815

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IDEA Electronic Components Group

UK . 815 parts In-Stock

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$9.530

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$9.054

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$8.577

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815

$9.530

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$8.577

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One Stop Electronics

USA . 914 parts In-Stock

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$16.000

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$16.000

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AZTECH Wire

Italy . 272 parts In-Stock

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$18.083

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Corphita

USA . 2,702 parts In-Stock

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Microchip USA

USA . 1,730 parts In-Stock

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DigiPath Technology Company

USA . 587 parts In-Stock

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$8.592

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Kepictronics

USA . 154 parts In-Stock

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Overview

Enhance your electronic designs with the SNJ54BCT646JT by Texas Instruments, a high-quality Bus Driver & Transceiver. Known for their reliability and innovation, Texas Instruments delivers top-notch products that exceed industry standards. This versatile component is ideal for various applications, offering fast propagation delay and 3-STATE output characteristics. With independent control and bidirectional count direction, this product provides unmatched value and performance. Upgrade your projects with the SNJ54BCT646JT and experience the benefits of cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material ensures durability and reliability, making the product suitable for harsh environments.

Propagation Delay At Nominal Supply: 10.5 ns

Low propagation delay allows for fast data transmission and efficient performance.

Screening Level: MIL-PRF-38535

This level of screening ensures high quality and compliance with military standards.

Power Supplies (V): 5

This voltage is commonly used in many systems, ensuring compatibility and ease of integration.

Output Polarity: TRUE

Accurate output polarity ensures reliable data transmission and compatibility with other components.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT646JT attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

DIRECTION CONTROL; SELECT INPUT FOR MULTIPLEXED TRANSMISSION OF REGISTERED/ REAL TIME DATA

Control Type:

INDEPENDENT CONTROL

Count Direction:

BIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T24

JESD-609 Code:

e0

Length:

32.005 mm

Load Capacitance (CL):

50 pF

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

67 mA

Propagation Delay At Nominal Supply:

10.5 ns

Propagation Delay (tpd):

12.4 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceiver

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Translation:

N/A

Trigger Type:

POSITIVE EDGE

Width:

7.62 mm

Trade Compliance

SNJ54BCT646JT Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-375-2534, 5962013752534

NIIN

013752534

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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