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SNJ54BCT623J

Texas Instruments

SNJ54BCT623J by Texas Instruments

SNJ54BCT623J by Texas Instruments is an 8-bit bus driver with a propagation delay of 8.3 ns, operating at a supply voltage of 5V. It features 3-STATE output characteristics and is designed for military-grade applications requiring bidirectional control in a ceramic package.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,316 parts In-Stock

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Digiode

USA . 4,176 parts In-Stock

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Electronic Expediters

USA . 69 parts In-Stock

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Bristol Electronics

USA . 5 parts In-Stock

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Atlantic Semiconductor

USA . 5 parts In-Stock

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Resion

USA . 3 parts In-Stock

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AZTECH Wire

Italy . 299 parts In-Stock

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$8.075

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Andel Nordic

Denmark . 3,686 parts In-Stock

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$8.355

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$8.021

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$8.021

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$8.021

Parana Technologies

USA . 513 parts In-Stock

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$12.844

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$13.321

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DigiPath Technology Company

USA . 229 parts In-Stock

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$14.143

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ChromeModa Solutions

Germany . 3,321 parts In-Stock

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$14.432

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$11.834

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IDEA Electronic Components Group

UK . 1,001 parts In-Stock

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$12.989

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One Stop Electronics

USA . 694 parts In-Stock

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Corphita

USA . 3,832 parts In-Stock

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Microchip USA

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Kepictronics

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Overview

Elevate your electronic projects with the SNJ54BCT623J by Texas Instruments, a premium quality bus driver and transceiver that delivers unmatched performance and reliability. Manufactured with precision using top-notch materials, this versatile component is perfect for a wide range of applications. Whether you're designing cutting-edge electronics or upgrading existing systems, this product offers seamless integration, optimal efficiency, and exceptional value. Trust Texas Instruments to provide you with the best in class solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring the product can withstand harsh environments and extended use.

Propagation Delay At Nominal Supply: 8 ns

Fast propagation delay allows for quick signal transmission and response times, ideal for efficient communication in bus driver applications.

Screening Level: MIL-PRF-38535

Meets military screening standards, ensuring high reliability and performance in demanding military or aerospace applications.

No. of Bits: 8

Offers a sufficient number of bits for data transmission, suitable for a wide range of bus driver and transceiver applications.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to integrate into existing systems without the need for additional power sources.

Load Capacitance (CL): 50 pF

Optimized load capacitance ensures efficient signal transmission and reception, enhancing the overall performance of the product.

Output Characteristics: 3-STATE

3-state output allows the bus driver to control the signal lines effectively, enabling multiple devices to share the same communication bus.

Technology: BICMOS

Utilizes BiCMOS technology for improved speed, power efficiency, and noise immunity, making it a reliable and high-performance choice for bus driver applications.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT623J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

IOL = 20MA @ VOL = 0.5V & IOH = 3MA @ VOH = 2.4V FOR PORT A

Control Type:

INDEPENDENT CONTROL

Count Direction:

BIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T20

JESD-609 Code:

e0

Length:

24.195 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

92 mA

Propagation Delay At Nominal Supply:

8 ns

Propagation Delay (tpd):

8.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Width:

7.62 mm

Trade Compliance

SNJ54BCT623J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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