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SNJ54BCT543JT

Texas Instruments

SNJ54BCT543JT by Texas Instruments

SNJ54BCT543JT by Texas Instruments is an 8-bit bus driver with a propagation delay of 9.6 ns and operates at a supply voltage of 5V. It features MIL-PRF-38535 screening level, 3-STATE output characteristics, and is ideal for military-grade applications requiring bidirectional control in a ceramic package.

Median Price

$33.063

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 12 parts In-Stock

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Digiode

USA . 1,872 parts In-Stock

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$31.410

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Vyrian

USA . 5,589 parts In-Stock

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Electronic Expediters

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Resion

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Mil-Aero Solutions, Inc.

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Beltway Electronics Company

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Eagle Technology Solutions

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A&K Electronics

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Bristol Electronics

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Q Components

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AZTECH Wire

Italy . 1,129 parts In-Stock

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Parana Technologies

USA . 572 parts In-Stock

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DigiPath Technology Company

USA . 52 parts In-Stock

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ChromeModa Solutions

Germany . 2,849 parts In-Stock

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IDEA Electronic Components Group

UK . 974 parts In-Stock

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Corphita

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Lixinc

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Microchip USA

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Overview

Looking for a reliable and high-quality solution for your bus driver and transceiver needs? Look no further than the SNJ54BCT543JT by Texas Instruments. With a MILITARY-grade screening level and BICMOS technology, this product offers unmatched performance and durability. Ideal for a wide range of applications, this 8-bit transceiver boasts a true output polarity and independent control. Trust Texas Instruments to deliver top-notch products that provide value, benefits, and advantages to customers looking for exceptional quality and reliability. Upgrade to the SNJ54BCT543JT today and experience the difference!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and reliability, making it ideal for harsh environments.

Propagation Delay At Nominal Supply: 9.6 ns

Low propagation delay ensures fast and efficient data transmission, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with a wide range of systems and devices.

Output Characteristics: 3-STATE

3-STATE output allows for tri-state control, providing flexibility in managing bus lines in multi-device communication systems.

Temperature Grade: MILITARY

Designed to meet military-grade specifications, ensuring reliable performance even in extreme temperature conditions.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT543JT attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

INDEPENDENT OUTPUT ENABLE FOR EACH DIRECTION; MASTER CONTROL FOR LATCH

Control Type:

INDEPENDENT CONTROL

Count Direction:

BIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T24

JESD-609 Code:

e0

Length:

32.005 mm

Load Capacitance (CL):

50 pF

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

71 mA

Propagation Delay At Nominal Supply:

9.6 ns

Propagation Delay (tpd):

13.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Width:

7.62 mm

Trade Compliance

SNJ54BCT543JT Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-458-4197, 5962014584197

NIIN

014584197

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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