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SNJ54BCT540J

Texas Instruments

SNJ54BCT540J by Texas Instruments

SNJ54BCT540J by Texas Instruments is an 8-bit bus driver with a propagation delay of 7.2 ns at 5V, suitable for military applications. It features a max operating temperature of 125°C, output polarity is inverted, and has a load capacitance of 50 pF.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 7,800 parts In-Stock

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Digiode

USA . 881 parts In-Stock

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ECAB

Sweden . 10 parts In-Stock

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Electronic Expediters

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AZTECH Wire

Italy . 343 parts In-Stock

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$4.921

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Andel Nordic

Denmark . 16 parts In-Stock

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$7.215

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$6.926

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Parana Technologies

USA . 2,312 parts In-Stock

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$11.659

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$12.053

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DigiPath Technology Company

USA . 14 parts In-Stock

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$12.838

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IDEA Electronic Components Group

UK . 1,372 parts In-Stock

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$13.100

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$12.445

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$11.790

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ChromeModa Solutions

Germany . 86 parts In-Stock

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$10.742

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One Stop Electronics

USA . 554 parts In-Stock

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Microchip USA

USA . 2,818 parts In-Stock

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Corphita

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Assy Fe

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Overview

Enhance your electronic designs with the SNJ54BCT540J by Texas Instruments, a top-tier manufacturer known for its quality and reliability. As a Bus Driver & Transceiver, this component offers seamless communication between various parts of your circuit. With a MIL-PRF-38535 screening level and 3-STATE output characteristics, this product ensures optimal performance in military-grade applications. Trust in the 8-bit design and 7.2 ns propagation delay to deliver swift and efficient data transmission. Elevate your projects with the superior value and benefits that this component brings, setting you apart from the competition.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Propagation Delay at Nominal Supply: 7.2 ns

Fast propagation delay ensures quick signal transmission, making this product suitable for high-speed communication applications.

Screening Level: MIL-PRF-38535

Meets stringent military screening standards for reliability and performance in harsh environments.

No. of Bits: 8

Offers a sufficient number of bits for data transmission in bus communication systems.

Nominal Supply Voltage / Vsup: 5V

Operates at a standard voltage level, making it compatible with most systems.

No. of Terminals: 20

Provides multiple connection points for versatile integration into different systems.

Output Characteristics: 3-STATE

Ability to set the output to a high impedance state when disabled, allowing for easy system integration and control.

Temperature Grade: MILITARY

Designed to withstand extreme temperature variations, making it suitable for military applications.

Technology: BICMOS

Utilizes BICMOS technology for efficient power consumption and high-performance operation.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT540J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DUAL OUTPUT ENABLE

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T20

JESD-609 Code:

e0

Length:

24.195 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

71 mA

Propagation Delay At Nominal Supply:

7.2 ns

Propagation Delay (tpd):

7.2 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Width:

7.62 mm

Trade Compliance

SNJ54BCT540J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-414-5211, 5962014145211

NIIN

014145211

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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