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SNJ54AS895GB

Texas Instruments

SNJ54AS895GB by Texas Instruments

SNJ54AS895GB by Texas Instruments is a Bit-Slice Micro Processor with 8-bit external data bus width, operating at temperatures from -55 to 125 °C. It features a package style of GRID ARRAY and is designed for military-grade applications requiring direct memory address generation using TTL technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,188 parts In-Stock

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Digiode

USA . 942 parts In-Stock

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942

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Distributors (Availability)

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AZTECH Wire

Italy . 271 parts In-Stock

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$11.831

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$11.831

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One Stop Electronics

USA . 764 parts In-Stock

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$23.000

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764

$23.000

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Corohmni

South Africa . 652 parts In-Stock

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$68.049

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Parana Technologies

USA . 536 parts In-Stock

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$76.193

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536

$76.193

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ChromeModa Solutions

Germany . 6,470 parts In-Stock

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$85.610

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$70.200

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6,470

$85.610

$70.200

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IDEA Electronic Components Group

UK . 2,073 parts In-Stock

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$85.610

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$81.330

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$77.049

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2,073

$85.610

$81.330

$77.049

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Corphita

USA . 1,328 parts In-Stock

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DigiPath Technology Company

USA . 1,179 parts In-Stock

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$77.186

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Overview

Unleash the power of cutting-edge technology with the SNJ54AS895GB from Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality products like this Bit-Slice Micro Processor that is designed to revolutionize your applications. With its military-grade temperature grade and direct memory address generator, this processor offers unparalleled performance and reliability. Upgrade your systems with confidence and experience the superior value and benefits that only Texas Instruments can provide. Trust in Texas Instruments for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed materials ensures durability and stability, making this product suitable for harsh operating environments.

Maximum Supply Voltage: 5.5 V

The higher maximum supply voltage allows for flexibility in power management and can support various system requirements.

Package Shape: SQUARE

The square package shape allows for efficient use of space and easy integration into circuit design.

No. of Terminals: 68

With a high number of terminals, this product offers increased connectivity options and versatility in system configurations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in a wide range of operating conditions.

Peripheral IC Type: BIT-SLICE PROCESSOR, DIRECT MEMORY ADDRESS GENERATOR

The inclusion of a bit-slice processor and direct memory address generator enhances the product's functionality and performance capabilities.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, making this product energy-efficient and reliable.

Temperature Grade: MILITARY

Designed for military-grade applications, this product meets stringent reliability and performance standards for mission-critical operations.

Technical Specifications

Bit-Slice Micro Processors SNJ54AS895GB attributes and parameters. Explore more Bit-Slice Micro Processors devices from Texas Instruments

Specs

External Data Bus Width:

8

JESD-30 Code:

S-CPGA-P68

Length:

27.94 mm

No. of Terminals:

68

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

27.94 mm

Trade Compliance

SNJ54AS895GB Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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