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SNJ54AS646JT

Texas Instruments

SNJ54AS646JT by Texas Instruments

SNJ54AS646JT by Texas Instruments is an 8-bit bus driver with a propagation delay of 20ns at 5V. It features a MIL-PRF-38535 screening level and operates in a temperature range from -55 to 125°C. Ideal for bidirectional control applications, this TTL technology device has dual terminals and supports independent control.

Median Price

$17.394

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Freelance Electronics

USA . 48 parts In-Stock

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$17.394

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$18.264

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$17.220

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Vyrian

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Digiode

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Digital Electronic Gebert Verwaltungs UG

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Dan-Mar Components

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Electronic Expediters

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Resion

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Mil-Aero Solutions, Inc.

USA . 5 parts In-Stock

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Sunrise Surplus Inc.

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Q Components

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AZTECH Wire

Italy . 792 parts In-Stock

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Parana Technologies

USA . 644 parts In-Stock

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$18.649

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ChromeModa Solutions

Germany . 2,225 parts In-Stock

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$17.079

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IDEA Electronic Components Group

UK . 1,150 parts In-Stock

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$18.745

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One Stop Electronics

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Microchip USA

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DigiPath Technology Company

USA . 483 parts In-Stock

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Perfect Parts

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Overview

Unlock seamless communication and efficient data transmission with the Texas Instruments SNJ54AS646JT Bus Driver & Transceivers. Crafted with precision using top-notch materials, this product ensures optimal performance in military-grade applications. Experience lightning-fast propagation delay, high output current, and true output polarity for reliable signal transmission. Trust in Texas Instruments' renowned expertise to deliver a quality product that exceeds expectations. Upgrade your systems today with the SNJ54AS646JT and enjoy unparalleled value and efficiency.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and reliability, making this product suitable for various harsh environments.

Propagation Delay At Nominal Supply: 20 ns

Fast propagation delay ensures quick and efficient signal transmission, making this product ideal for high-speed data communication.

Screening Level: MIL-PRF-38535

Compliance with MIL-PRF-38535 screening level ensures high quality and reliability, meeting stringent military standards.

No. of Bits: 8

With 8 bits, this product can handle a wide range of data processing applications, making it versatile and suitable for different functions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V nominal supply voltage ensures compatibility with most systems and ease of integration.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for high flexibility in controlling the output signal, enabling efficient interfacing with other components.

Temperature Grade: MILITARY

Designed to operate in extreme temperature conditions, the military-grade temperature specs ensure reliability in harsh environments.

Technology: TTL

Using TTL technology provides reliable and fast signal processing capabilities, making this product suitable for high-performance applications.

Technical Specifications

Bus Driver & Transceivers SNJ54AS646JT attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DIRECTION CONTROL; WITH SELECT INPUT FOR MULTIPLEXED TRANSMISSION OF REGISTERED OR REAL TIM

Control Type:

INDEPENDENT CONTROL

Count Direction:

BIDIRECTIONAL

Family:

AS

JESD-30 Code:

R-GDIP-T24

JESD-609 Code:

e0

Length:

32.005 mm

Load Capacitance (CL):

50 pF

Maximum I (ol):

32 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

211 mA

Propagation Delay At Nominal Supply:

20 ns

Propagation Delay (tpd):

10 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Trigger Type:

POSITIVE EDGE

Width:

7.62 mm

Trade Compliance

SNJ54AS646JT Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-303-9936, 5962013039936

NIIN

013039936

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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