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SNJ54ALS632AFN

Texas Instruments

SNJ54ALS632AFN by Texas Instruments

SNJ54ALS632AFN by Texas Instruments is a 32-bit digital arithmetic circuit with a supply voltage of 4.5V to 5.5V and propagation delay of 65ns. It features a 3-STATE output, operates in temperatures ranging from -55°C to 125°C, and is ideal for military-grade applications requiring high-speed data processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,846 parts In-Stock

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2,846

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Digiode

USA . 665 parts In-Stock

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665

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 508 parts In-Stock

1+ parts

$2.307

100+ parts

-

1k+ parts

$2.215

10k+ parts

$2.215

508

$2.307

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$2.215

$2.215

Parana Technologies

USA . 17 parts In-Stock

1+ parts

$8.577

100+ parts

-

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$9.236

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17

$8.577

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$9.236

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DigiPath Technology Company

USA . 2,319 parts In-Stock

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$9.444

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2,319

$9.444

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ChromeModa Solutions

Germany . 5,449 parts In-Stock

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$9.637

100+ parts

$7.902

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5,449

$9.637

$7.902

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IDEA Electronic Components Group

UK . 1,246 parts In-Stock

1+ parts

$9.637

100+ parts

$9.155

1k+ parts

$8.673

10k+ parts

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1,246

$9.637

$9.155

$8.673

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AZTECH Wire

Italy . 668 parts In-Stock

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$11.898

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668

$11.898

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One Stop Electronics

USA . 1,512 parts In-Stock

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$45.000

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$45.000

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Corphita

USA . 2,873 parts In-Stock

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2,873

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Overview

Experience unmatched quality and reliability with the Texas Instruments SNJ54ALS632AFN digital arithmetic circuit. From a trusted manufacturer known for their cutting-edge technology, this product offers superior performance in a variety of applications. With 32 bits and a 3-STATE output characteristic, this chip carrier package provides fast propagation delay and a wide operating temperature range, making it ideal for military-grade projects. Trust Texas Instruments to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material is durable and cost-effective, making the product sturdy and affordable.

Surface Mount: YES

Surface mounting allows for easy installation and integration into circuit boards, saving time and effort.

No. of Bits: 32

With 32 bits, the product can handle complex arithmetic calculations with high precision and accuracy.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of electronic systems.

Maximum Operating Temperature: 125 °C

The product can operate efficiently at high temperatures, making it suitable for demanding industrial environments.

Technology: TTL

TTL technology provides fast switching speeds and low power consumption, enhancing the performance of the product.

Technical Specifications

Digital Arithmetic Circuits SNJ54ALS632AFN attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Additional Features:

BUILT IN DIAGNOSTICS; BYTE CONTROL

Family:

ALS

JESD-30 Code:

S-PQCC-J68

Length:

24.2316 mm

Load Capacitance (CL):

50 pF

No. of Bits:

32

No. of Functions:

1

No. of Terminals:

68

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Supply Current (ICC):

250 mA

Propagation Delay (tpd):

65 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

24.2316 mm

Trade Compliance

SNJ54ALS632AFN Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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