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SNJ54AHC573W

Texas Instruments

SNJ54AHC573W by Texas Instruments

SNJ54AHC573W by Texas Instruments is an 8-bit bus driver with a propagation delay of 10 ns at 3.3V, suitable for military-grade applications. It features a 3-STATE output and operates in a temperature range from -55 to 125°C, making it ideal for high-reliability systems requiring fast signal transmission. With surface mount capability and low power consumption of 0.04 mA, this CMOS technology device offers efficient data transfer in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,005 parts In-Stock

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Digiode

USA . 351 parts In-Stock

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351

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Distributors (Availability)

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Andel Nordic

Denmark . 482 parts In-Stock

1+ parts

$7.202

100+ parts

-

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$6.914

10k+ parts

$6.914

482

$7.202

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$6.914

$6.914

AZTECH Wire

Italy . 305 parts In-Stock

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$8.522

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305

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Parana Technologies

USA . 2,018 parts In-Stock

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$14.531

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$14.968

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$14.531

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$14.968

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DigiPath Technology Company

USA . 527 parts In-Stock

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$16.000

100+ parts

$14.720

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527

$16.000

$14.720

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ChromeModa Solutions

Germany . 1,191 parts In-Stock

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$16.327

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$13.388

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$16.327

$13.388

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IDEA Electronic Components Group

UK . 133 parts In-Stock

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$16.327

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$15.511

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$14.694

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133

$16.327

$15.511

$14.694

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One Stop Electronics

USA . 483 parts In-Stock

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$29.000

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$29.000

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Corphita

USA . 4,495 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 3,576 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality SNJ54AHC573W by Texas Instruments. This bus driver & transceiver boasts a ceramic, glass-sealed package body material and a MIL-PRF-38535 screening level for top-notch performance. With 8 bits, true output polarity, and a low propagation delay of only 10 ns, this component offers exceptional value and reliability. Whether you're working on military-grade applications or commercial projects, trust Texas Instruments to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay allows for fast signal transmission, making the product suitable for high-speed communication applications.

Surface Mount: YES

Ease of installation and space-saving design, perfect for modern compact electronic devices.

Screening Level: MIL-PRF-38535

Compliance with military screening standards ensures reliability and performance in harsh environments.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with common supply voltages, making it versatile for various applications.

Output Characteristics: 3-STATE

3-state outputs provide flexibility in signal routing and control, enhancing the functionality of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Temperature Grade: MILITARY

Built to withstand extreme temperatures, ideal for military or industrial applications where temperature fluctuations may occur.

Technical Specifications

Bus Driver & Transceivers SNJ54AHC573W attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

BROADSIDE VERSION OF 373

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-GDFP-F20

JESD-609 Code:

e0

Length:

13.09 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Equivalence Code:

FL20,.3

Package Shape:

Package Style (Meter):

FLATPACK

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

16.5 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.45 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.92 mm

Trade Compliance

SNJ54AHC573W Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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