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SN75374D-00

Texas Instruments

SN75374D-00 by Texas Instruments

SN75374D-00 by Texas Instruments is a MOSFET Gate Driver with 4 functions, operating at 5V nominal voltage. It has a turn-on time of 0.06us and turn-off time of 0.05us, suitable for commercial applications requiring NAND gate based interface ICs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,253 parts In-Stock

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4,253

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Digiode

USA . 2,128 parts In-Stock

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2,128

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 129 parts In-Stock

1+ parts

$10.213

100+ parts

-

1k+ parts

$10.746

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129

$10.213

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$10.746

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AZTECH Wire

Italy . 287 parts In-Stock

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$11.176

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287

$11.176

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DigiPath Technology Company

USA . 855 parts In-Stock

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$11.246

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$10.346

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855

$11.246

$10.346

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IDEA Electronic Components Group

UK . 554 parts In-Stock

1+ parts

$11.475

100+ parts

$10.901

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$10.328

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554

$11.475

$10.901

$10.328

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ChromeModa Solutions

Germany . 448 parts In-Stock

1+ parts

$11.475

100+ parts

$9.410

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448

$11.475

$9.410

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One Stop Electronics

USA . 937 parts In-Stock

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$34.500

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937

$34.500

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Corphita

USA . 3,918 parts In-Stock

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Overview

Unleash the power of efficient and reliable MOSFET gate drivers with the SN75374D-00 by Texas Instruments. Crafted with precision and expertise, this high-quality product offers unparalleled performance in a compact package. Ideal for a wide range of applications, this NAND gate-based driver ensures seamless operation and maximum efficiency. Experience the value and benefits of cutting-edge technology with the SN75374D-00, delivering superior results with every use. Trust Texas Instruments for top-notch quality and innovation in MOSFET gate drivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 5.25 V

Operates within a safe voltage range, preventing damage to the MOSFET gate drivers.

No. of Functions: 4

Provides versatility and capability to handle multiple functions efficiently.

Package Shape: RECTANGULAR

Space-efficient design that can easily fit into different electronic applications.

Maximum Supply Voltage-1: 24 V

Ability to handle higher supply voltages for more demanding applications.

No. of Terminals: 16

Sufficient number of terminals for connecting to various components and devices.

Package Style (Meter): SMALL OUTLINE

Compact size that saves space on the circuit board and allows for denser layouts.

Minimum Supply Voltage-1: 4.75 V

Wide range of operating voltages for flexibility in different power supply scenarios.

Maximum Operating Temperature: 70 °C

Can operate reliably under high temperature conditions, suitable for industrial environments.

Minimum Operating Temperature: 0 °C

Capable of starting up and functioning in colder temperatures, ensuring consistent performance in varying conditions.

Terminal Position: DUAL

Dual terminal positions provide options for different wiring configurations and flexibility in setup.

Maximum Seated Height: 1.75 mm

Low profile design that can fit into tight spaces or slim electronic devices.

Width: 3.9 mm

Narrow width for efficient use of board space and compatibility with compact designs.

Length: 9.9 mm

Optimal length that balances space-saving with accessibility for installation and maintenance.

Temperature Grade: COMMERCIAL

Suitable for standard commercial applications, offering reliable performance in typical operating conditions.

Technology: TTL

Uses TTL technology for improved signal processing and compatibility with TTL-based systems.

Terminal Form: GULL WING

Gull wing terminals for secure soldering connections and mechanical stability.

Nominal Supply Voltage: 5 V

Operates at a standard nominal voltage commonly used in electronic circuits.

Turn-on Time: 0.06 us

Fast turn-on time for quick response in switching operations.

Terminal Pitch: 1.27 mm

Standard terminal pitch for compatibility with common PCB layouts and components.

Nominal Supply Voltage-1: 20 V

Higher nominal supply voltage option for more demanding applications.

Nominal Output Peak Current Limit: 0.5 A

Peak current limit of 0.5 A for safe operation and protection of connected components.

Interface IC Type: NAND GATE BASED MOSFET DRIVER

Uses NAND gate-based interface IC for efficient signal processing and driving MOSFETs.

Turn-off Time: 0.05 us

Short turn-off time for rapid switching and efficient control of connected devices.

Technical Specifications

MOSFET Gate Drivers SN75374D-00 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

Length:

9.9 mm

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Peak Current Limit:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.05 us

Turn-on Time:

.06 us

Width:

3.9 mm

Trade Compliance

SN75374D-00 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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