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SN75374DG4

Texas Instruments

SN75374DG4 by Texas Instruments

SN75374DG4 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 5.25V and 4 functions. It is used for driving power MOSFETs in various applications such as motor control, power supplies, and inverters.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,961 parts In-Stock

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Digiode

USA . 2,996 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Ampacity Inc.

Singapore . 588 parts In-Stock

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$3.500

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588

$3.500

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Parana Technologies

USA . 905 parts In-Stock

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$4.518

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$4.964

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905

$4.518

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$4.964

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ChromeModa Solutions

Germany . 1,044 parts In-Stock

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$5.076

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$4.162

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1,044

$5.076

$4.162

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IDEA Electronic Components Group

UK . 755 parts In-Stock

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$5.076

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$4.568

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755

$5.076

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$4.568

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One Stop Electronics

USA . 509 parts In-Stock

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$8.500

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509

$8.500

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AZTECH Wire

Italy . 600 parts In-Stock

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$17.067

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Corphita

USA . 4,072 parts In-Stock

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Continental Prestige Electronics

USA . 2,882 parts In-Stock

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DigiPath Technology Company

USA . 1,895 parts In-Stock

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$4.577

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Argo Parts USA

USA . 1,054 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Experience the power and reliability of Texas Instruments with the SN75374DG4 MOSFET Gate Driver. Designed with the highest quality materials, this small outline package offers a range of benefits for your applications. With its inverted output polarity and totem-pole characteristics, this driver provides superior performance and precise control. Whether you're working with motor drives, power supplies, or other high-voltage circuits, the SN75374DG4 delivers exceptional value and efficiency. Trust in Texas Instruments' expertise and choose the SN75374DG4 for all your gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with durable plastic/epoxy material, making it suitable for long-term usage.

Surface Mount: YES

The surface mount feature of this product allows for easy installation and a compact design.

Maximum Supply Voltage: 5.25 V

With a high maximum supply voltage, this MOSFET gate driver can handle a wide range of power input, providing flexibility in various applications.

No. of Functions: 4

This gate driver offers multiple functions, allowing for versatile use and integration into complex electronic systems.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures compatibility with standard board layouts and easy integration into existing designs.

Maximum Supply Voltage-1: 24 V

This gate driver can withstand high voltage supply-1, making it suitable for demanding applications with higher power requirements.

Power Supplies (V): 5/24

This product can accept power supplies of either 5V or 24V, offering flexibility in choosing the appropriate power source.

No. of Terminals: 16

With a sufficient number of terminals, this gate driver allows for straightforward connections with other components, simplifying the assembly process.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this gate driver enables compact designs, saving valuable space in electronic systems.

Minimum Supply Voltage-1: 4.75 V

This gate driver can o/ate reliably even with low supply voltage-1, ensuring stable /formance in low-power applications.

Minimum Supply Voltage: 4.75 V

The minimum supply voltage requirement for this gate driver is low, enabling efficient o/ation and power management in various setups.

Maximum O/ating Tem/ature: 70 °C

With a high maximum o/ating tem/ature, this product is suitable for use in environments with elevated tem/atures, ensuring reliability and durability.

Output Characteristics: TOTEM-POLE

The totem-pole output characteristics of this gate driver enable efficient and reliable signal transmission, ensuring accurate control of MOSFET devices.

Minimum O/ating Tem/ature: 0 °C

This gate driver can o/ate in cold tem/atures, making it suitable for use in a wide range of environments and applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity, ensuring reliable signal transfer and minimizing signal loss.

Terminal Position: DUAL

With dual terminal positions, this gate driver offers flexibility in PCB layout and provides options for optimized signal routing.

Maximum Seated Height: 1.75 mm

The low seated height of this gate driver allows for compact designs and efficient use of space, especially in applications with height restrictions.

Width: 3.9 mm

The narrow width of this gate driver ensures compatibility with tight PCB layouts and enables space-efficient system designs.

Output Polarity: INVERTED

The inverted output polarity of this gate driver caters to specific applications requiring inverted signal control, enhancing its versatility.

High Side Driver: YES

This gate driver includes a high side driver, allowing for effective control and management of power flow in various circuit configurations.

Maximum Time At Peak Reflow Tem/ature (s): 30

The maximum time at peak reflow tem/ature provides a guideline for soldering processes, ensuring pro/ assembly of the gate driver.

Peak Reflow Tem/ature °C: 260

The high peak reflow tem/ature capability of this gate driver ensures pro/ soldering and reliable connections during assembly.

Length: 9.9 mm

The length of this gate driver suits typical PCB layouts, providing compatibility with standard designs and facilitating easy integration.

Tem/ature Grade: COMMERCIAL

This gate driver meets commercial tem/ature grade specifications, making it suitable for standard industrial applications.

Technology: BIPOLAR

The bipolar technology utilized in this gate driver offers robust /formance and precise control over MOSFETS, enhancing overall system efficiency and reliability.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and strong mechanical connections, ensuring reliable electrical contact between the gate driver and the PCB.

Maximum Supply Current: 47 mA

With a low maximum supply current requirement, this gate driver o/ates efficiently, reducing power consumption and minimizing heat generation.

Input Characteristics: STANDARD

The standard input characteristics of this gate driver provide compatibility with common control signals, simplifying its integration into various systems.

Nominal Supply Voltage: 5 V

This gate driver o/ates at a nominal supply voltage of 5V, making it compatible with many standard power sources.

Turn-on Time: 0.06 us

The fast turn-on time of this gate driver allows for quick and precise control of MOSFET devices, contributing to efficient system o/ation.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm ensures compatibility with standard PCB layouts and facilitates easy soldering and interconnection.

Nominal Supply Voltage-1: 20 V

With a nominal supply voltage-1 of 20V, this gate driver meets the requirements of applications calling for higher o/ating voltages.

Nominal Output Peak Current Limit: 0.5 A

The nominal output peak current limit of 0.5A allows for reliable and precise handling of MOSFET outputs, ensuring efficient system control.

Interface IC Type: NAND GATE BASED MOSFET DRIVER

This gate driver utilizes a NAND gate-based interface IC design, providing effective MOSFET control and signal compatibility.

Turn-off Time: 0.05 us

The fast turn-off time of this gate driver enables rapid switching and control of MOSFET devices, enhancing overall system /formance.

Technical Specifications

MOSFET Gate Drivers SN75374DG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 24V SUPPLY

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/24

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

47 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.06 us

Width:

3.9 mm

Trade Compliance

SN75374DG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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