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SN75372DG4

Texas Instruments

SN75372DG4 by Texas Instruments

SN75372DG4 by Texas Instruments is a MOSFET gate driver with 2 functions, operating at supply voltages of 5-24V. It features totem-pole output characteristics and turn-on/off times of 0.065/0.05 us. Ideal for applications requiring high-speed switching in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,397 parts In-Stock

1+ parts

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5,397

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Digiode

USA . 4,120 parts In-Stock

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4,120

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 279 parts In-Stock

1+ parts

$2.514

100+ parts

$233.486

1k+ parts

$2.263

10k+ parts

-

279

$2.514

$233.486

$2.263

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DigiPath Technology Company

USA . 693 parts In-Stock

1+ parts

$2.768

100+ parts

-

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693

$2.768

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ChromeModa Solutions

Germany . 4,721 parts In-Stock

1+ parts

$2.825

100+ parts

$2.316

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4,721

$2.825

$2.316

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IDEA Electronic Components Group

UK . 1,459 parts In-Stock

1+ parts

$2.825

100+ parts

-

1k+ parts

$2.542

10k+ parts

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1,459

$2.825

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$2.542

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AZTECH Wire

Italy . 457 parts In-Stock

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$5.766

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457

$5.766

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One Stop Electronics

USA . 1,307 parts In-Stock

1+ parts

$32.500

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1,307

$32.500

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Corphita

USA . 2,638 parts In-Stock

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2,638

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Overview

Enhance the performance of your electronic devices with the Texas Instruments SN75372DG4 MOSFET Gate Driver. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in a compact package. Ideal for a wide range of applications, this gate driver offers efficient power management and precise control. Experience seamless operation and enhanced functionality with the SN75372DG4, a valuable addition to any project. Elevate your designs with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring long-term reliability.

Surface Mount: YES

The surface mount capability makes it easier to integrate this MOSFET gate driver into different PCB designs, saving space and simplifying assembly.

Maximum Supply Voltage: 5.25 V

A higher maximum supply voltage allows for greater flexibility and compatibility with various power sources.

No. of Functions: 2

Having multiple functions in a single device can streamline circuit design and reduce component count, leading to cost savings and improved efficiency.

Package Shape: RECTANGULAR

The rectangular shape is a common standard for electronic components, making it easy to design and layout the PCB for this gate driver.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this MOSFET gate driver can withstand demanding conditions and operate reliably in a wide range of environments.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration ensures improved efficiency and faster switching times, making this gate driver suitable for high-frequency applications.

Technology: BIPOLAR

The bipolar technology used in this gate driver offers high performance and precise control over the MOSFET, resulting in enhanced overall system functionality.

Technical Specifications

MOSFET Gate Drivers SN75372DG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,20

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

24 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.065 us

Width:

3.9 mm

Trade Compliance

SN75372DG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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