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SN75372DRG4

Texas Instruments

SN75372DRG4 by Texas Instruments

SN75372DRG4 by Texas Instruments is a MOSFET gate driver with 2 functions, operating at 5-24V. It has a turn-on time of 0.065us and turn-off time of 0.05us. Ideal for commercial applications requiring inverted output polarity and standard input characteristics.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 4,044 parts In-Stock

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Digiode

USA . 3,502 parts In-Stock

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3,502

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AZTECH Wire

Italy . 598 parts In-Stock

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$8.484

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$8.484

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Parana Technologies

USA . 917 parts In-Stock

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$9.120

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$9.772

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917

$9.120

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DigiPath Technology Company

USA . 302 parts In-Stock

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$10.042

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$9.239

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302

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IDEA Electronic Components Group

UK . 2,281 parts In-Stock

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$10.247

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$9.735

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$9.222

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2,281

$10.247

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$9.222

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ChromeModa Solutions

Germany . 673 parts In-Stock

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$10.247

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$8.403

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One Stop Electronics

USA . 811 parts In-Stock

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$24.500

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Kepictronics

USA . 8,200 parts In-Stock

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Corphita

USA . 4,738 parts In-Stock

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Overview

Unlock the power of efficient and reliable MOSFET gate driving with the SN75372DRG4 by Texas Instruments. With a strong reputation for high-quality manufacturing, Texas Instruments delivers a cutting-edge solution for your gate driving needs. Ideal for applications requiring precise control and fast response times, this MOSFET gate driver offers unparalleled value and performance. Whether you're in the automotive, industrial, or consumer electronics industry, the SN75372DRG4 provides the reliability and efficiency you need to take your projects to the next level. Trust Texas Instruments to deliver top-notch products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 5.25 V

Operating at a maximum supply voltage of 5.25V ensures safe and stable performance.

No. of Functions: 2

Having 2 functions allows for versatile control and operation in different applications.

Maximum Supply Voltage-1: 24 V

A maximum supply voltage of 24V provides flexibility for higher power applications.

Power Supplies (V): 5,20

This product can operate with power supplies of 5V and 20V, accommodating different power requirements.

Minimum Supply Voltage-1: 4.75 V

Operating at a minimum supply voltage of 4.75V ensures reliable performance even at lower power levels.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand high temperature environments.

Output Characteristics: TOTEM-POLE

Totem-pole output characteristics provide enhanced drive capability and efficiency for connected MOSFETs.

Minimum Operating Temperature: 0 °C

Being able to operate at temperatures as low as 0°C makes this product suitable for a wide range of environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold terminal finish ensures good conductivity and corrosion resistance.

Maximum Seated Height: 1.75 mm

With a maximum seated height of 1.75mm, this product is compact and suitable for space-constrained applications.

Output Polarity: INVERTED

Inverted output polarity allows for flexibility in driving MOSFETs and other components.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this product can withstand high-temperature soldering processes.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable operation in standard operating environments.

Maximum Supply Current: 24 mA

Operating with a maximum supply current of 24mA ensures efficient power usage.

Nominal Supply Voltage: 5 V

Operating at a nominal supply voltage of 5V provides stable and consistent performance.

Turn-on Time: 0.065 us

Fast turn-on time of 0.065us ensures quick response and efficient operation.

Nominal Output Peak Current Limit: 0.5 A

Having a nominal output peak current limit of 0.5A ensures safe and reliable operation under load.

Interface IC Type: NAND GATE BASED MOSFET DRIVER

NAND gate-based interface IC type allows for logical operations and precise control of connected MOSFETs.

Turn-off Time: 0.05 us

Fast turn-off time of 0.05us ensures quick response and efficient operation when switching off.

Technical Specifications

MOSFET Gate Drivers SN75372DRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,20

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

24 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.065 us

Width:

3.9 mm

Trade Compliance

SN75372DRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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