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SN75374DR

Texas Instruments

SN75374DR by Texas Instruments

SN75374DR by Texas Instruments is a MOSFET gate driver with 4 functions, operating at 5.25V max supply voltage and 4.75V min supply voltage. It features a totem-pole output polarity and is ideal for commercial applications requiring high side drivers with a max output current of 0.5A per channel.

Median Price

$2.021

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,500 parts In-Stock

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$2.021

2,500

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$2.021

Distributors (In-Stock)

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Digiode

USA . 4,939 parts In-Stock

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4,939

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Vyrian

USA . 4,385 parts In-Stock

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4,385

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Distributors (Availability)

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Parana Technologies

USA . 1,731 parts In-Stock

1+ parts

$2.386

100+ parts

-

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$2.884

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1,731

$2.386

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$2.884

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DigiPath Technology Company

USA . 1,801 parts In-Stock

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$2.627

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1,801

$2.627

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ChromeModa Solutions

Germany . 5,204 parts In-Stock

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$2.681

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$2.198

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$2.681

$2.198

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IDEA Electronic Components Group

UK . 688 parts In-Stock

1+ parts

$2.681

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$2.413

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688

$2.681

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$2.413

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Andel Nordic

Denmark . 3,750 parts In-Stock

1+ parts

$5.411

100+ parts

-

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$5.194

10k+ parts

$5.194

3,750

$5.411

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$5.194

$5.194

Ampacity Inc.

Singapore . 1,270 parts In-Stock

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$9.500

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1,270

$9.500

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AZTECH Wire

Italy . 1,048 parts In-Stock

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$18.630

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1,048

$18.630

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One Stop Electronics

USA . 518 parts In-Stock

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$22.500

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518

$22.500

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A-Z Elektronik GmbH

Germany . 7,247 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Corphita

USA . 2,306 parts In-Stock

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Argo Parts USA

USA . 615 parts In-Stock

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615

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Continental Prestige Electronics

USA . 387 parts In-Stock

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387

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Unlock the power of your electronics with the SN75374DR by Texas Instruments. As a leading manufacturer in MOSFET gate drivers, Texas Instruments ensures top-notch quality and reliability. With applications ranging from motor control to power supplies, this versatile product offers unmatched value and benefits. Experience seamless operation and increased efficiency with this innovative solution. Choose Texas Instruments for cutting-edge technology that delivers superior performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 5.25 V

Provides a safe operating range for the device.

No. of Functions: 4

Offers multiple functions in a single device, increasing efficiency.

Package Shape: RECTANGULAR

Compact and space-saving design for easy integration into systems.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures high conductivity and long-lasting performance.

Maximum Operating Temperature: 70 °C

Can operate in a wide range of temperatures, suitable for various applications.

Output Characteristics: TOTEM-POLE

Provides a high-current drive capability for efficient switching applications.

Minimum Operating Temperature: 0 °C

Suitable for use in both low and high-temperature environments.

Maximum Seated Height: 1.75 mm

Low profile design for space-constrained applications.

Width: 3.9 mm

Compact size for easy placement on PCBs.

Output Polarity: INVERTED

Allows for easy interfacing with complementary devices.

High Side Driver: YES

Includes a high side driver for controlling power devices efficiently.

Peak Reflow Temperature: 260C

Can withstand high-temperature reflow processes during assembly.

No. of Channels: 4

Multiple channels for driving and controlling multiple MOSFETs.

Technology: BIPOLAR

Uses bipolar technology for reliable performance and fast switching speeds.

Nominal Supply Voltage: 5 V

Standard voltage supply for easy integration into existing systems.

Turn-on Time: 0.06 us

Fast turn-on time for quick and responsive switching operations.

Terminal Pitch: 1.27 mm

Standard pitch for easy soldering and connection on PCBs.

Technical Specifications

MOSFET Gate Drivers SN75374DR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 24V SUPPLY

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

.5 A

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

47 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.06 us

Width:

3.9 mm

Trade Compliance

SN75374DR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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