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SN75372PE4

Texas Instruments

SN75372PE4 by Texas Instruments

SN75372PE4 by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at 5.25V max supply voltage and 24mA max supply current. It has a turn-on time of 0.065us and turn-off time of 0.05us, suitable for applications requiring inverted output polarity in commercial temperature grade environments.

Median Price

$5.075

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 475 parts In-Stock

1+ parts

$4.660

100+ parts

$2.940

1k+ parts

$2.710

10k+ parts

-

475

$4.660

$2.940

$2.710

-

DigiKey

USA . 480 parts In-Stock

1+ parts

$5.490

100+ parts

$3.509

1k+ parts

$3.153

10k+ parts

$3.064

480

$5.490

$3.509

$3.153

$3.064

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,801 parts In-Stock

1+ parts

$4.798

100+ parts

-

1k+ parts

-

10k+ parts

-

4,801

$4.798

-

-

-

Vyrian

USA . 8,394 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,394

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 437 parts In-Stock

1+ parts

$4.545

100+ parts

-

1k+ parts

-

10k+ parts

-

437

$4.545

-

-

-

Parana Technologies

USA . 1,109 parts In-Stock

1+ parts

$9.786

100+ parts

-

1k+ parts

$10.359

10k+ parts

-

1,109

$9.786

-

$10.359

-

DigiPath Technology Company

USA . 81 parts In-Stock

1+ parts

$10.776

100+ parts

-

1k+ parts

-

10k+ parts

-

81

$10.776

-

-

-

ChromeModa Solutions

Germany . 1,798 parts In-Stock

1+ parts

$10.996

100+ parts

$9.017

1k+ parts

-

10k+ parts

-

1,798

$10.996

$9.017

-

-

IDEA Electronic Components Group

UK . 1,143 parts In-Stock

1+ parts

$10.996

100+ parts

$10.446

1k+ parts

$9.896

10k+ parts

-

1,143

$10.996

$10.446

$9.896

-

Metaverse IC Inc.

Canada . 20,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,950

-

-

-

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Microchip USA

USA . 2,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,263

-

-

-

-

Overview

Unlock the power of your electronics with the SN75372PE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality MOSFET Gate Drivers that offer unparalleled performance and reliability. Ideal for a range of applications, this innovative product provides value through its efficient operation, precise control, and advanced features. Experience the benefits of enhanced functionality and increased efficiency with the SN75372PE4, setting new standards in electronic design. Elevate your projects with Texas Instruments and discover the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection for the internal components, ensuring long-term reliability and performance.

Maximum Supply Voltage: 5.25 V

Supports a wide range of supply voltage, allowing flexibility in different power supply configurations.

No. of Functions: 2

Two functions in a single MOSFET gate driver enable efficient control and management of multiple MOSFETs, simplifying the circuit design.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy integration into various circuit layouts and board designs.

Maximum Supply Voltage-1: 24 V

High maximum supply voltage provides compatibility with a wide range of applications and power sources.

No. of Terminals: 8

Eight terminals allow for versatile connectivity options and flexibility in circuit configurations.

Package Style (Meter): IN-LINE

In-line package style simplifies PCB layout and assembly, making it suitable for space-constrained applications.

Minimum Supply Voltage-1: 4.75 V

Low minimum supply voltage ensures efficient operation even in low power scenarios.

Minimum Operating Temperature: 0 °C

Ability to operate at 0°C ensures reliable performance in various environmental conditions.

Maximum Seated Height: 5.08 mm

Low seated height allows for compact and space-saving designs, ideal for applications with size constraints.

Output Polarity: INVERTED

Inverted output polarity provides flexibility in controlling the connected MOSFETs, enhancing system performance and efficiency.

Maximum Output Current: 0.5 A

Supports high output current, making it suitable for driving power MOSFETs and handling high-power applications.

Technology: BIPOLAR

Bipolar technology ensures robust and reliable operation, suitable for demanding industrial and automotive applications.

Maximum Supply Current: 24 mA

Low supply current consumption for efficient power management and reduced heat dissipation.

Nominal Supply Voltage: 5 V

Standard nominal supply voltage for compatibility with common power sources and ease of integration.

Turn-on Time: 0.065 us

Fast turn-on time ensures quick response and precise control of the MOSFETs, enhancing system performance.

Technical Specifications

MOSFET Gate Drivers SN75372PE4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.81 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

.5 A

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

24 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.05 us

Turn-on Time:

.065 us

Width:

7.62 mm

Trade Compliance

SN75372PE4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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