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SN74S51DR

Texas Instruments

SN74S51DR by Texas Instruments

SN74S51DR by Texas Instruments is a TTL logic gate with 2 functions and 4 inputs. It has a propagation delay of 5.5 ns at a nominal voltage of 5V, making it suitable for industrial applications requiring fast signal processing in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,826 parts In-Stock

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Digiode

USA . 4,510 parts In-Stock

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Electronic Expediters

USA . 4,200 parts In-Stock

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4,200

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Distributors (Availability)

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AZTECH Wire

Italy . 586 parts In-Stock

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$5.806

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586

$5.806

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Parana Technologies

USA . 899 parts In-Stock

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$21.809

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$22.285

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899

$21.809

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$22.285

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DigiPath Technology Company

USA . 1,127 parts In-Stock

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$24.015

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1,127

$24.015

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ChromeModa Solutions

Germany . 1,013 parts In-Stock

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$24.505

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$20.094

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1,013

$24.505

$20.094

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IDEA Electronic Components Group

UK . 542 parts In-Stock

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$24.505

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$23.280

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$22.054

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542

$24.505

$23.280

$22.054

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One Stop Electronics

USA . 263 parts In-Stock

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$46.000

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263

$46.000

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QUARKTWIN TECHNOLOGY LTD

USA . 16,063 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,319 parts In-Stock

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Corphita

USA . 2,124 parts In-Stock

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Microchip USA

USA . 212 parts In-Stock

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Overview

Elevate your projects with the SN74S51DR by Texas Instruments, a top-quality logic gate that delivers exceptional performance and reliability. With a reputation for excellence, Texas Instruments offers cutting-edge technology in every product they create. Ideal for a wide range of applications, this logic gate provides seamless integration and efficiency. Experience the value and benefits of the SN74S51DR, designed to meet your needs and exceed your expectations. Unlock the potential of your projects with Texas Instruments.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 5.5 ns

Low propagation delay ensures fast response time, making this logic gate suitable for high-speed applications.

No. of Functions: 2

Having 2 functions in one package offers cost savings and saves board space.

No. of Inputs: 4

Provides flexibility in logic design with 4 input options.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage makes it compatible with many existing systems.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperatures, suitable for industrial applications.

Technical Specifications

Logic Gates SN74S51DR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

ANOTHER FUNCTION HAS 6 INPUT

Family:

S

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

20 Amp

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

22 mA

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

5.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74S51DR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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