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SN74LVC3G14DCUTE4

Texas Instruments

SN74LVC3G14DCUTE4 by Texas Instruments

SN74LVC3G14DCUTE4 by Texas Instruments is a CMOS logic gate with 3 functions, 5.4 ns propagation delay, and 1.8V nominal voltage. Ideal for automotive applications due to its Schmitt Trigger feature and operating temperature range of -40°C to 125°C. Package style: Small Outline, Very Thin Profile, Shrink Pitch.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 43,000 parts In-Stock

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Vyrian

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Digiode

USA . 3,038 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Elcom Components

USA . 70 parts In-Stock

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70

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AZTECH Wire

Italy . 507 parts In-Stock

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$9.874

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507

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Ampacity Inc.

Singapore . 905 parts In-Stock

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$10.000

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$10.000

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Parana Technologies

USA . 1,403 parts In-Stock

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$10.381

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$10.895

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One Stop Electronics

USA . 214 parts In-Stock

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$11.000

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DigiPath Technology Company

USA . 1,337 parts In-Stock

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$11.431

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ChromeModa Solutions

Germany . 5,611 parts In-Stock

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$11.664

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$9.564

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IDEA Electronic Components Group

UK . 100 parts In-Stock

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$10.498

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Corohmni

South Africa . 152 parts In-Stock

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Semicontronic

India . 924 parts In-Stock

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Component Stockers USA

USA . 262 parts In-Stock

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Continental Prestige Electronics

USA . 6,180 parts In-Stock

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Corphita

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Argo Parts USA

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Microchip USA

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Bastille Electronics

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Overview

Enhance your electronic projects with the SN74LVC3G14DCUTE4 by Texas Instruments, a top-quality logic gate designed to deliver reliable performance. Manufactured by industry leader Texas Instruments, this versatile component is perfect for applications requiring precise signal processing and high-speed operation. With a compact design and low power consumption, this logic gate offers exceptional value and efficiency. Upgrade your circuits with the SN74LVC3G14DCUTE4 and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 5.4 ns

Low propagation delay ensures fast signal processing, making these logic gates suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration of the logic gates onto circuit boards.

No. of Functions: 3

Having multiple functions in a single package allows for more functionality in a compact design.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage which can help in reducing power consumption in electronic devices.

Load Capacitance (CL): 50 pF

The load capacitance value indicates the ability of the logic gates to drive capacitive loads reliably.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures makes these logic gates suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for temperature range and performance, ensuring reliability in automotive applications.

Technical Specifications

Logic Gates SN74LVC3G14DCUTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.4 ns

Propagation Delay (tpd):

9.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74LVC3G14DCUTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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