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SN74LVC373APWTE4

Texas Instruments

SN74LVC373APWTE4 by Texas Instruments

SN74LVC373APWTE4 by Texas Instruments is an 8-bit bus driver with a propagation delay of 6.8 ns at 1.8V, suitable for industrial applications. It features a max operating temperature of 85°C, output polarity TRUE, and a terminal pitch of 0.65mm in a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 10,560 parts In-Stock

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Vyrian

USA . 2,345 parts In-Stock

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Digiode

USA . 1,248 parts In-Stock

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Nova Conductors

Japan . 38 parts In-Stock

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Andel Nordic

Denmark . 2,910 parts In-Stock

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$5.651

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$5.425

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$5.425

2,910

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$5.425

$5.425

AZTECH Wire

Italy . 656 parts In-Stock

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$6.746

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Parana Technologies

USA . 316 parts In-Stock

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$18.942

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$19.008

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DigiPath Technology Company

USA . 1,529 parts In-Stock

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$20.857

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IDEA Electronic Components Group

UK . 2,198 parts In-Stock

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$21.283

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$20.219

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$19.155

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ChromeModa Solutions

Germany . 817 parts In-Stock

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$21.283

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$17.452

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Ampacity Inc.

Singapore . 1,601 parts In-Stock

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$54.000

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One Stop Electronics

USA . 1,383 parts In-Stock

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$65.000

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Corphita

USA . 2,929 parts In-Stock

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Microchip USA

USA . 1,579 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unlock the power of seamless data transmission with the SN74LVC373APWTE4 by Texas Instruments. Crafted with precision and expertise, this bus driver & transceiver offers unparalleled quality and reliability. Ideal for a wide range of applications, this product guarantees swift propagation delay and efficient performance. Experience the value of smooth operation and seamless connectivity with this versatile component. Trust in Texas Instruments to deliver cutting-edge technology that meets your every need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 6.8 ns

With a fast propagation delay, this product ensures quick and efficient data transmission in bus driver applications.

Surface Mount: YES

Being surface mountable makes the installation process easier and more compact, saving space on the PCB.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V makes this product energy-efficient.

Output Characteristics: 3-STATE

The 3-state output allows for a high degree of flexibility and control over the output signals.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product efficient and reliable.

Technical Specifications

Bus Driver & Transceivers SN74LVC373APWTE4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

6.8 ns

Propagation Delay (tpd):

8.2 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74LVC373APWTE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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