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SN74LVC2G86DCURE4

Texas Instruments

SN74LVC2G86DCURE4 by Texas Instruments

SN74LVC2G86DCURE4 by Texas Instruments is a logic gate with 2 functions and 2 inputs. It has a propagation delay of 4.7 ns at 1.8V, suitable for industrial applications requiring fast signal processing in compact designs. This CMOS technology device operates b/w -40 to 85°C, making it ideal for various temperature environments.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 68,920 parts In-Stock

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Vyrian

USA . 8,537 parts In-Stock

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North Shore Components

USA . 2,521 parts In-Stock

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Digiode

USA . 765 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 357 parts In-Stock

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$7.000

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Corohmni

South Africa . 145 parts In-Stock

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$10.164

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AZTECH Wire

Italy . 611 parts In-Stock

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$17.440

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Parana Technologies

USA . 634 parts In-Stock

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$19.838

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$1,842.268

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$17.854

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634

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DigiPath Technology Company

USA . 216 parts In-Stock

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$21.844

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ChromeModa Solutions

Germany . 3,832 parts In-Stock

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$22.290

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$18.278

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IDEA Electronic Components Group

UK . 670 parts In-Stock

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One Stop Electronics

USA . 458 parts In-Stock

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Component Stockers USA

USA . 798 parts In-Stock

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Argo Parts USA

USA . 4,141 parts In-Stock

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Continental Prestige Electronics

USA . 3,793 parts In-Stock

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Corphita

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Microchip USA

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Bastille Electronics

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Overview

Elevate your projects with the SN74LVC2G86DCURE4 by Texas Instruments, a high-quality logic gate that delivers superior performance and reliability. Manufactured by a trusted industry leader, this compact yet powerful component is perfect for a wide range of applications. With fast propagation delay and efficient power consumption, this logic gate offers exceptional value and flexibility for your electronic designs. Trust Texas Instruments to provide innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material

Plastic/Epoxy material provides durability and protection for the logic gates, making them suitable for various environments.

Propagation Delay At Nominal Supply

Low propagation delay ensures fast operation, making these logic gates ideal for applications where speed is crucial.

Surface Mount

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

No. of Functions

Having multiple functions in a single component increases efficiency and reduces the need for additional components.

Nominal Supply Voltage / Vsup (V)

Operating at a low nominal supply voltage of 1.8V can help reduce power consumption and improve energy efficiency.

Maximum Operating Temperature

High operating temperature range of up to 85°C ensures reliability in various thermal conditions.

Technology

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Maximum Supply Voltage (Vsup)

Support for a maximum supply voltage of 5.5V allows for flexibility in different voltage requirements within a circuit.

Technical Specifications

Logic Gates SN74LVC2G86DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.7 ns

Propagation Delay (tpd):

9.9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74LVC2G86DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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