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SN74LVC2G04DRLRG4

Texas Instruments

SN74LVC2G04DRLRG4 by Texas Instruments

SN74LVC2G04DRLRG4 by Texas Instruments is a logic gate with 2 functions, 4.6 ns propagation delay, and 8 ns propagation delay. It operates at a nominal voltage of 1.8V and has a max operating temperature of 125°C. Ideal for automotive applications due to its small outline package style and CMOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 48,760 parts In-Stock

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Vyrian

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Digiode

USA . 837 parts In-Stock

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Nova Conductors

Japan . 55 parts In-Stock

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Corohmni

South Africa . 889 parts In-Stock

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$12.081

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AZTECH Wire

Italy . 857 parts In-Stock

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$14.942

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Parana Technologies

USA . 836 parts In-Stock

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$24.172

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$24.829

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DigiPath Technology Company

USA . 1,638 parts In-Stock

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$26.616

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$24.487

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IDEA Electronic Components Group

UK . 2,320 parts In-Stock

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$27.159

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$25.801

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$24.443

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ChromeModa Solutions

Germany . 562 parts In-Stock

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$22.270

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One Stop Electronics

USA . 768 parts In-Stock

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Ampacity Inc.

Singapore . 232 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

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Bastille Electronics

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Overview

Experience unparalleled performance and reliability with the Texas Instruments SN74LVC2G04DRLRG4 Logic Gates. From a trusted manufacturer known for its cutting-edge technology, this product offers fast propagation delay, low power consumption, and a wide operating temperature range, making it ideal for automotive applications. With 3-state output characteristics and a compact, surface-mount package, this logic gate provides exceptional value and versatility for your electronic design needs. Upgrade your projects with the SN74LVC2G04DRLRG4 and enjoy seamless operation and precision engineering at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and cost-effective.

Propagation Delay At Nominal Supply: 4.6 ns

With a low propagation delay, this product ensures fast signal processing.

Surface Mount: YES

Being surface mountable enhances the ease of installation and saves space on the PCB.

No. of Functions: 2

This product offers dual functions, providing versatility in circuit design.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment on the PCB.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage increases energy efficiency.

Load Capacitance (CL): 50 pF

The moderate load capacitance ensures stability in signal transmission.

Power Supplies (V): 3.3

With multiple power supply options, this product can be used in diverse applications.

No. of Terminals: 6

The 6 terminals offer flexibility in connectivity and circuit layout.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile make this product suitable for compact designs.

Maximum I (ol): 32 Amp

The high maximum output current enables driving multiple components in a circuit.

Propagation Delay (tpd): 8 ns

Although slightly higher, the propagation delay is still within acceptable limits for most applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environments.

Output Characteristics: 3-STATE

The 3-state output allows for tri-state logic, increasing design flexibility.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

The use of multiple quality finishes enhances terminal durability and conductivity.

Terminal Position: DUAL

Dual terminal position options provide versatility in PCB layout.

Maximum Seated Height: 0.6 mm

The low seated height minimizes the overall size of the package.

Width: 1.2 mm

The narrow width of the package helps in fitting the product in tight spaces.

Minimum Supply Voltage (Vsup): 1.65 V

With a low minimum supply voltage, this product can operate in low-power scenarios.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for robust soldering during assembly.

Length: 1.6 mm

The compact length of the package ensures a space-efficient design.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature rating makes this product suitable for automotive applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity.

Terminal Form: FLAT

The flat terminal form simplifies soldering and ensures a secure connection.

Packing Method: TR

The TR packing method offers convenience in handling and storage.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high-density mounting on the PCB.

Maximum Supply Voltage (Vsup): 5.5 V

A high maximum supply voltage expands the range of compatible power sources.

Maximum Power Supply Current (ICC): 0.01 mA

With a low power supply current, this product helps conserve energy.

Technical Specifications

Logic Gates SN74LVC2G04DRLRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e4

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.6 ns

Propagation Delay (tpd):

8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.2 mm

Trade Compliance

SN74LVC2G04DRLRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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