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SN74LVC1G98DCKTE4

Texas Instruments

SN74LVC1G98DCKTE4 by Texas Instruments

SN74LVC1G98DCKTE4 by Texas Instruments is a CMOS logic IC with 6.3ns propagation delay, 50pF load capacitance, and 24A max I (ol). It is used in industrial applications for its Schmitt Trigger feature and operates at temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,054 parts In-Stock

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Digiode

USA . 1,118 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 628 parts In-Stock

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$12.273

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Parana Technologies

USA . 1,816 parts In-Stock

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$13.419

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$13.933

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DigiPath Technology Company

USA . 75 parts In-Stock

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$14.775

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$13.593

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75

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ChromeModa Solutions

Germany . 6,740 parts In-Stock

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$15.077

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$12.363

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IDEA Electronic Components Group

UK . 2,225 parts In-Stock

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$15.077

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$14.323

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$13.569

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2,225

$15.077

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$13.569

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One Stop Electronics

USA . 1,405 parts In-Stock

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Corphita

USA . 4,298 parts In-Stock

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Overview

Enhance your electronic projects with the SN74LVC1G98DCKTE4 from Texas Instruments. This high-quality logic IC offers fast propagation delay, low power consumption, and versatile applications in various industries. With its advanced technology and reliable performance, this product ensures efficiency and precision in your designs. Trust Texas Instruments for cutting-edge solutions that deliver value and innovation to customers. Upgrade your projects today with the SN74LVC1G98DCKTE4 and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the IC.

Propagation Delay At Nominal Supply: 6.3 ns

Low propagation delay ensures fast signal processing and high performance of the logic IC.

Surface Mount: YES

Surface mount technology makes the installation of this IC easy and efficient on PCBs.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage requirement helps in reducing power consumption and heat generation.

Load Capacitance (CL): 50 pF

Optimal load capacitance ensures stable and reliable operation of the IC.

Power Supplies (V): 3.3

Compatible with commonly used power supply voltages, making it versatile for various applications.

Maximum I (ol): 24 Amp

High output current capability allows for driving larger loads without an external amplifier.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes it suitable for industrial applications where temperature variations are common.

Min Operating Temperature: -40 °C

Operational in extreme cold conditions, ensuring reliability in diverse environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This finish provides excellent conductivity and corrosion resistance for long-term reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC energy-efficient and reliable.

Technical Specifications

Other Function Logic ICs SN74LVC1G98DCKTE4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

SN74LVC1G98DCKTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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