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SN74LVC06APWG4

Texas Instruments

SN74LVC06APWG4 by Texas Instruments

SN74LVC06APWG4 by Texas Instruments is a logic gate with 6 functions, featuring a propagation delay of 5 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in temperatures ranging from -40 to 125°C and is ideal for automotive applications due to its thin profile and low power consumption of 0.04 mA at a max supply voltage of 3.6V.

Median Price

$0.484

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 68 parts In-Stock

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$0.484

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Chip Stock

USA . 323,500 parts In-Stock

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323,500

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Vyrian

USA . 4,611 parts In-Stock

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Digiode

USA . 640 parts In-Stock

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640

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Connector Distribution Corp

USA . 100 parts In-Stock

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100

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Right Parts Inc.

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.484

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2,000

$0.484

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Ampacity Inc.

Singapore . 938 parts In-Stock

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$3.000

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938

$3.000

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AZTECH Wire

Italy . 549 parts In-Stock

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$15.384

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549

$15.384

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Parana Technologies

USA . 351 parts In-Stock

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$21.541

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$21.927

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351

$21.541

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$21.927

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DigiPath Technology Company

USA . 442 parts In-Stock

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$23.719

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$21.821

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442

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IDEA Electronic Components Group

UK . 1,349 parts In-Stock

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$24.203

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$22.993

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$21.783

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1,349

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ChromeModa Solutions

Germany . 945 parts In-Stock

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$24.203

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$19.846

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One Stop Electronics

USA . 1,287 parts In-Stock

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$64.000

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Corphita

USA . 3,282 parts In-Stock

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Microchip USA

USA . 1,510 parts In-Stock

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Overview

Discover the superior quality and reliability of Texas Instruments' SN74LVC06APWG4 Logic Gates. Designed with cutting-edge technology, this product offers a wide range of applications in automotive and industrial settings. With a nominal supply voltage of 1.8V and open-drain output characteristics, customers can expect efficient performance and seamless integration. Experience the benefits of fast propagation delay and low power consumption, making this logic gate an exceptional choice for your electronic projects. Trust Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to environmental factors, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 5 ns

The low propagation delay allows for quick response times, making this logic gate suitable for high-speed applications.

No. of Functions: 6

Having multiple functions in one package reduces the need for additional components, simplifying circuit design and saving space on the PCB.

Nominal Supply Voltage / Vsup (V): 1.8

The 1.8V supply voltage is common in many electronic devices, making this logic gate compatible with a wide range of applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this logic gate suitable for automotive and industrial applications where temperature fluctuations are common.

Technology: CMOS

CMOS technology offers lower power consumption and higher noise immunity, making the logic gate energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates SN74LVC06APWG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

5 ns

Propagation Delay (tpd):

7.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

SN74LVC06APWG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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