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SN74LVC00ADBRE4

Texas Instruments

SN74LVC00ADBRE4 by Texas Instruments

SN74LVC00ADBRE4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It operates at a supply voltage range of 1.65V to 3.6V, with a propagation delay of 5.5ns and max temperature of 125°C. Ideal for automotive applications due to its small outline package and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 9,183 parts In-Stock

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Digiode

USA . 4,589 parts In-Stock

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Vyrian

USA . 4,009 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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AZTECH Wire

Italy . 677 parts In-Stock

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$11.965

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Parana Technologies

USA . 1,702 parts In-Stock

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DigiPath Technology Company

USA . 103 parts In-Stock

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$18.408

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ChromeModa Solutions

Germany . 1,729 parts In-Stock

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$18.784

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$15.403

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IDEA Electronic Components Group

UK . 467 parts In-Stock

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$17.845

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$16.906

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Ampacity Inc.

Singapore . 1,198 parts In-Stock

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$39.000

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One Stop Electronics

USA . 697 parts In-Stock

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Corphita

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Perfect Parts

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Microchip USA

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Overview

Elevate your electronics project with the SN74LVC00ADBRE4 by Texas Instruments, a top-quality logic gate that offers unparalleled performance and reliability. Manufactured by industry leader Texas Instruments, this logic gate is perfect for a wide range of applications, from consumer electronics to automotive systems. With fast propagation delays and low power consumption, this product provides exceptional value and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that meets all your project needs.

Feature Benefit Bullets

Propagation Delay at Nominal Supply: 5.5 ns

Low propagation delay allows for fast signal processing, making this product suitable for high-speed applications.

No. of Functions: 4

Having multiple functions in one component can simplify circuit design and reduce overall system complexity.

Nominal Supply Voltage: 1.8V

Lower supply voltage can lead to reduced power consumption, making this product more energy-efficient.

Maximum Operating Temperature: 125°C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for automotive applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of operating voltages, making this product versatile and reliable.

Technical Specifications

Logic Gates SN74LVC00ADBRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

6.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

14 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.3 mm

Trade Compliance

SN74LVC00ADBRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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