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SN74LV1T86DBVRG4

Texas Instruments

SN74LV1T86DBVRG4 by Texas Instruments

SN74LV1T86DBVRG4 by Texas Instruments is a CMOS logic gate with 2 inputs, operating at a supply voltage range of 1.6V to 5.5V. It has a propagation delay of 13ns and can handle a max output current of 8A. This small outline package is ideal for automotive applications due to its low profile design and wide temperature range from -40°C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 3,425 parts In-Stock

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Vyrian

USA . 3,237 parts In-Stock

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Ampacity Inc.

Singapore . 357 parts In-Stock

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$4.000

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$4.000

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AZTECH Wire

Italy . 598 parts In-Stock

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$5.383

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Parana Technologies

USA . 539 parts In-Stock

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$19.144

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$19.190

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DigiPath Technology Company

USA . 1,603 parts In-Stock

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$21.080

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ChromeModa Solutions

Germany . 2,001 parts In-Stock

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$21.510

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$17.638

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$21.510

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IDEA Electronic Components Group

UK . 373 parts In-Stock

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$21.510

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$20.434

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$19.359

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$21.510

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One Stop Electronics

USA . 958 parts In-Stock

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$55.000

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Component Stockers USA

USA . 156,219 parts In-Stock

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Microchip USA

USA . 8,285 parts In-Stock

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Corphita

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Overview

Unlock the power of advanced technology with the SN74LV1T86DBVRG4 by Texas Instruments, a cutting-edge Logic Gate designed for optimal performance in a compact and durable package. Manufactured with precision and expertise, this versatile component is perfect for a wide range of applications in various industries. Experience seamless integration and enhanced efficiency with this high-quality product, offering unmatched reliability and functionality. Elevate your projects with the superior value and benefits that the SN74LV1T86DBVRG4 provides, setting new standards for excellence in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the logic gate, ensuring reliability and durability.

Surface Mount: YES

Allows for easy and convenient installation on printed circuit boards, saving space and simplifying assembly.

No. of Inputs: 2

Suitable for basic logic operations and common circuit designs.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for efficient and stable operation of the logic gate.

Propagation Delay (tpd): 13 ns

Low propagation delay ensures fast signal processing and response time.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various operating environments.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology provides low power consumption and high noise immunity.

Technical Specifications

Logic Gates SN74LV1T86DBVRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay (tpd):

13 ns

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74LV1T86DBVRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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