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SN74LV132APWE4

Texas Instruments

SN74LV132APWE4 by Texas Instruments

SN74LV132APWE4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 17.5 ns at 2.5V, making it suitable for automotive applications due to its Schmitt Trigger technology and wide operating temperature range (-40 to 125 °C).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,544 parts In-Stock

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5,544

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Digiode

USA . 2,003 parts In-Stock

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2,003

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Distributors (Availability)

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AZTECH Wire

Italy . 540 parts In-Stock

1+ parts

$7.023

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540

$7.023

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Parana Technologies

USA . 2,180 parts In-Stock

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$25.733

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-

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$26.334

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2,180

$25.733

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$26.334

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DigiPath Technology Company

USA . 33 parts In-Stock

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$28.335

100+ parts

$26.068

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33

$28.335

$26.068

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ChromeModa Solutions

Germany . 4,632 parts In-Stock

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$28.913

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$23.709

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4,632

$28.913

$23.709

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IDEA Electronic Components Group

UK . 538 parts In-Stock

1+ parts

$28.913

100+ parts

$27.467

1k+ parts

$26.022

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538

$28.913

$27.467

$26.022

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One Stop Electronics

USA . 977 parts In-Stock

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$44.000

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977

$44.000

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Perfect Parts

USA . 3,401 parts In-Stock

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Microchip USA

USA . 2,261 parts In-Stock

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Corphita

USA . 1,385 parts In-Stock

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Overview

Elevate your electronic designs with the SN74LV132APWE4 by Texas Instruments, a top-tier manufacturer known for delivering high-quality logic gates. Ideal for a wide range of applications, this compact and efficient component offers customers unmatched reliability and performance. With its advanced technology and robust design, this logic gate ensures fast propagation delay, low power consumption, and 3-state output characteristics. Experience seamless integration and superior functionality with the SN74LV132APWE4 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making it ideal for mass production and easy handling.

Propagation Delay At Nominal Supply: 17.5 ns

This fast propagation delay ensures quick signal processing, making the product suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient placement on circuit boards, saving space and enabling automated assembly.

No. of Functions: 4

Having multiple functions in one component reduces the need for additional components, saving cost, space, and simplifying the design.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage makes the product suitable for low power consumption applications, enhancing energy efficiency.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to withstand harsh conditions, making it suitable for a wide range of environments.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltages, making the product versatile and efficient.

Technical Specifications

Logic Gates SN74LV132APWE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

17.5 ns

Propagation Delay (tpd):

23 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74LV132APWE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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