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SN74HCT14PWRE4

Texas Instruments

SN74HCT14PWRE4 by Texas Instruments

SN74HCT14PWRE4 by Texas Instruments is a CMOS logic gate with 6 functions, 40 ns propagation delay at 5V. It features Schmitt Trigger technology, operates in industrial temperature range (-40 to 85 °C), and has a small outline package for surface mount applications.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 88,080 parts In-Stock

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Vyrian

USA . 6,561 parts In-Stock

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Digiode

USA . 2,469 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 350 parts In-Stock

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$13.881

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350

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Ampacity Inc.

Singapore . 462 parts In-Stock

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$17.000

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Parana Technologies

USA . 973 parts In-Stock

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$21.092

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$1,958.722

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$18.983

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973

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$1,958.722

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Corohmni

South Africa . 319 parts In-Stock

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$21.303

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DigiPath Technology Company

USA . 81 parts In-Stock

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$23.225

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$21.367

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IDEA Electronic Components Group

UK . 624 parts In-Stock

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$23.699

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$22.514

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$21.329

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ChromeModa Solutions

Germany . 407 parts In-Stock

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$23.699

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$19.433

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Semicontronic

India . 492 parts In-Stock

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One Stop Electronics

USA . 656 parts In-Stock

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Continental Prestige Electronics

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Corphita

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Argo Parts USA

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Microchip USA

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Bastille Electronics

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the SN74HCT14PWRE4 logic gates. Perfect for a wide range of applications, these logic gates offer exceptional performance and efficiency. With a nominal supply voltage of 5V and a propagation delay of only 40ns, this product provides fast and accurate results. Whether you're working on industrial automation, consumer electronics, or automotive systems, the SN74HCT14PWRE4 is the perfect choice for your project. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring longevity and ease of handling.

Propagation Delay At Nominal Supply: 40 ns

With a low propagation delay, this logic gate operates efficiently and quickly, making it suitable for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage, this logic gate can be easily integrated into existing circuits without the need for additional power sources.

No. of Functions: 6

Having multiple functions in a single component offers versatility and efficiency in circuit design, reducing the need for multiple separate components.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions and maintain reliable performance in extreme heat.

Technical Specifications

Logic Gates SN74HCT14PWRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

40 ns

Propagation Delay (tpd):

40 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74HCT14PWRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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