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SN74CBTD3861DWG4

Texas Instruments

SN74CBTD3861DWG4 by Texas Instruments

SN74CBTD3861DWG4 by Texas Instruments is a 10-bit bus driver with 3-STATE output, operating at a supply voltage of 5V. It features a propagation delay of 0.35ns and can handle load capacitance up to 50pF. This CMOS technology device is ideal for bidirectional control applications in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 4,932 parts In-Stock

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Vyrian

USA . 3,973 parts In-Stock

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AZTECH Wire

Italy . 267 parts In-Stock

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$17.760

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Parana Technologies

USA . 2,217 parts In-Stock

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$21.857

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$2,029.719

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$19.671

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$2,029.719

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DigiPath Technology Company

USA . 347 parts In-Stock

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$24.067

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$22.141

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ChromeModa Solutions

Germany . 4,589 parts In-Stock

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$24.558

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$20.138

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IDEA Electronic Components Group

UK . 1,982 parts In-Stock

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$24.558

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$23.330

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$22.102

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One Stop Electronics

USA . 522 parts In-Stock

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$37.000

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Component Stockers USA

USA . 791 parts In-Stock

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$99.990

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Corphita

USA . 2,700 parts In-Stock

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Microchip USA

USA . 2,493 parts In-Stock

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Perfect Parts

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Andel Nordic

Denmark . 269 parts In-Stock

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Overview

Enhance your electronic designs with the SN74CBTD3861DWG4 by Texas Instruments, a top-quality bus driver & transceiver that delivers unparalleled performance and reliability. Manufactured using advanced CMOS technology, this versatile component is designed for industrial-grade applications, ensuring seamless operation in challenging environments. With true output polarity and 3-state output characteristics, this compact device offers exceptional value and benefits to customers seeking efficient data transmission solutions. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage ensures consistent performance and reliability of the product.

No. of Bits: 10

Provides sufficient data transmission capacity for various applications.

Propagation Delay (tpd): 0.35 ns

Fast propagation delay ensures quick and efficient data transfer.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Output Characteristics: 3-STATE

Allows for multiple devices to share a common bus line, offering flexibility in controlling the output.

Technology: CMOS

Complementary metal-oxide-semiconductor technology provides low power consumption and high noise immunity, ideal for electronic circuits.

Technical Specifications

Bus Driver & Transceivers SN74CBTD3861DWG4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE BUS SWITCH

Control Type:

ENABLE LOW

Count Direction:

BIDIRECTIONAL

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

15.365 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

10

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP24,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.003 mA

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

SN74CBTD3861DWG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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