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SN74AUC2G86DCURE4

Texas Instruments

SN74AUC2G86DCURE4 by Texas Instruments

SN74AUC2G86DCURE4 by Texas Instruments is a logic gate with 3.8 ns propagation delay, suitable for industrial applications. It features 2 functions, 2 inputs, and operates at a nominal voltage of 1.2V. With a small outline package style and surface mount capability, it offers high performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,372 parts In-Stock

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3,372

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Digiode

USA . 180 parts In-Stock

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180

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Distributors (Availability)

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AZTECH Wire

Italy . 868 parts In-Stock

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$9.185

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868

$9.185

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Parana Technologies

USA . 1,166 parts In-Stock

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$16.013

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-

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$16.356

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1,166

$16.013

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$16.356

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DigiPath Technology Company

USA . 166 parts In-Stock

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$17.632

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$16.222

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166

$17.632

$16.222

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ChromeModa Solutions

Germany . 6,676 parts In-Stock

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$17.992

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$14.753

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6,676

$17.992

$14.753

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IDEA Electronic Components Group

UK . 828 parts In-Stock

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$17.992

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$17.092

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$16.193

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828

$17.992

$17.092

$16.193

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One Stop Electronics

USA . 301 parts In-Stock

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$56.000

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301

$56.000

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QUARKTWIN TECHNOLOGY LTD

USA . 18,643 parts In-Stock

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Corphita

USA . 4,201 parts In-Stock

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Microchip USA

USA . 3,470 parts In-Stock

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Overview

Discover the SN74AUC2G86DCURE4 by Texas Instruments, a high-quality logic gate that offers fast propagation delay and low power consumption. With its advanced technology and reliable performance, this product is perfect for a wide range of applications. From industrial automation to consumer electronics, this versatile component provides seamless integration and efficient operation. Trust Texas Instruments to deliver innovative solutions that meet your needs, ensuring optimal functionality and value for your projects. Take your designs to the next level with the SN74AUC2G86DCURE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection to the internal components of the logic gates.

Propagation Delay At Nominal Supply: 3.8 ns

The fast propagation delay of 3.8 ns ensures quick processing of signals, making this product suitable for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 1.2

The low nominal supply voltage of 1.2V helps in reducing power consumption and making the product more energy-efficient.

Output Characteristics: 3-STATE

The 3-STATE output characteristics provide flexibility in controlling the output signal, enabling tristate logic operation for multiple devices on the same bus.

Technology: CMOS

The CMOS technology used in this product ensures low power consumption, high noise immunity, and compatibility with a wide range of voltage levels.

Technical Specifications

Logic Gates SN74AUC2G86DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

5 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Propagation Delay At Nominal Supply:

3.8 ns

Propagation Delay (tpd):

3.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74AUC2G86DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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