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SN74AUC1G86DBVRE4

Texas Instruments

SN74AUC1G86DBVRE4 by Texas Instruments

SN74AUC1G86DBVRE4 by Texas Instruments is a logic gate with 3.8ns propagation delay, suitable for industrial applications. It operates at 1.1V nominal voltage and has a load capacitance of 15pF, making it ideal for low-power circuits. With a compact package style and surface-mount capability, this device offers high performance in a small form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,708 parts In-Stock

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Digiode

USA . 1,581 parts In-Stock

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1,581

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One Stop Electronics

USA . 196 parts In-Stock

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$10.000

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196

$10.000

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AZTECH Wire

Italy . 885 parts In-Stock

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$16.806

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885

$16.806

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Parana Technologies

USA . 1,731 parts In-Stock

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$29.703

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$62.252

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$29.703

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$62.252

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DigiPath Technology Company

USA . 119 parts In-Stock

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$32.707

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$30.090

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119

$32.707

$30.090

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ChromeModa Solutions

Germany . 2,555 parts In-Stock

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$33.374

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$27.367

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$33.374

$27.367

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IDEA Electronic Components Group

UK . 1,455 parts In-Stock

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$33.374

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$31.705

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$30.037

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1,455

$33.374

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$30.037

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Corphita

USA . 2,764 parts In-Stock

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Microchip USA

USA . 2,319 parts In-Stock

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Overview

Enhance the efficiency and reliability of your electronic designs with the Texas Instruments SN74AUC1G86DBVRE4 logic gate. Manufactured by a trusted industry leader, this high-quality component offers fast propagation delay, low power consumption, and a wide operating temperature range, making it perfect for a variety of applications. From consumer electronics to industrial automation, this versatile logic gate provides value and performance that will exceed your expectations. Upgrade your projects today with the SN74AUC1G86DBVRE4 and experience the benefits of top-notch technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material makes the package lightweight and durable, making it suitable for portable and rugged applications.

Propagation Delay At Nominal Supply: 3.8 ns

Low propagation delay ensures fast signal processing, making this product ideal for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.1

Low nominal supply voltage helps in reducing power consumption and heat generation, making it energy efficient.

Load Capacitance (CL): 15 pF

Low load capacitance ensures minimal signal distortion and reliable operation in high-frequency circuits.

Power Supplies (V): 1.2/2.5

Supports a range of power supply voltages, providing flexibility in different operating conditions.

No. of Terminals: 5

Optimum number of terminals for connecting to other components in a circuit, simplifying the overall design.

Maximum I (ol): 9 Amp

High maximum output current capability allows for driving multiple loads without the need for external amplifiers.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliable performance in varying environmental conditions.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating makes this product suitable for harsh industrial environments.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital circuits.

Technical Specifications

Logic Gates SN74AUC1G86DBVRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

9 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3.8 ns

Propagation Delay (tpd):

14.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74AUC1G86DBVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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