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SN74AUC1G04DCKRE4

Texas Instruments

SN74AUC1G04DCKRE4 by Texas Instruments

SN74AUC1G04DCKRE4 by Texas Instruments is a CMOS logic gate with 3ns propagation delay, 15pF load capacitance, and 9A max I (ol). It operates at a supply voltage of 1.2V and is ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 68,530 parts In-Stock

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Vyrian

USA . 3,689 parts In-Stock

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Digiode

USA . 552 parts In-Stock

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552

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Distributors (Availability)

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Component Stockers USA

USA . 138,352 parts In-Stock

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$0.970

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AZTECH Wire

Italy . 207 parts In-Stock

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$17.767

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Parana Technologies

USA . 1,945 parts In-Stock

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$22.956

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$23.609

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DigiPath Technology Company

USA . 75 parts In-Stock

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$25.277

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75

$25.277

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ChromeModa Solutions

Germany . 3,860 parts In-Stock

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$25.793

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$21.150

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IDEA Electronic Components Group

UK . 698 parts In-Stock

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$25.793

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$24.503

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$23.214

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698

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One Stop Electronics

USA . 823 parts In-Stock

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$46.000

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Microchip USA

USA . 2,477 parts In-Stock

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Corphita

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Overview

Experience top-notch quality and unmatched reliability with the SN74AUC1G04DCKRE4 logic gate by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This logic gate offers lightning-fast propagation delay, low power consumption, and a compact design for seamless integration. Whether you're working on consumer electronics, industrial automation, or telecommunications, this versatile component will elevate your projects to new heights. Trust Texas Instruments to provide the innovative solutions you need for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 3 ns

The low propagation delay allows for fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mounting capability makes installation and assembly easy and efficient, saving time and effort.

Nominal Supply Voltage / Vsup (V): 1.2

The low supply voltage requirement helps in reducing power consumption and heat generation, making the product energy-efficient.

Load Capacitance (CL): 15 pF

The low load capacitance ensures that the logic gates can drive external components efficiently without causing signal degradation.

Power Supplies (V): 1.2/2.5

The dual power supply options offer flexibility in different operating conditions, making the product versatile and adaptable.

Output Characteristics: 3-STATE

The 3-STATE output allows the logic gates to be in three different states, adding versatility and control in signal processing.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making the product reliable and efficient.

Technical Specifications

Logic Gates SN74AUC1G04DCKRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

9 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3 ns

Propagation Delay (tpd):

3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74AUC1G04DCKRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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