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SN74AUC08RGYRG4

Texas Instruments

SN74AUC08RGYRG4 by Texas Instruments

SN74AUC08RGYRG4 by Texas Instruments is a logic gate with 4 functions and 2 inputs. It has a propagation delay of 3.4 ns at a nominal voltage of 1.2V, making it ideal for industrial applications requiring fast signal processing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,202 parts In-Stock

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Digiode

USA . 1,816 parts In-Stock

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1,816

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Distributors (Availability)

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Component Stockers USA

USA . 10,373 parts In-Stock

1+ parts

$5.640

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$5.640

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Parana Technologies

USA . 2,007 parts In-Stock

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$7.612

100+ parts

$706.905

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$6.851

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2,007

$7.612

$706.905

$6.851

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DigiPath Technology Company

USA . 1,060 parts In-Stock

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$8.382

100+ parts

$7.711

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1,060

$8.382

$7.711

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ChromeModa Solutions

Germany . 1,751 parts In-Stock

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$8.553

100+ parts

$7.013

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1,751

$8.553

$7.013

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IDEA Electronic Components Group

UK . 1,107 parts In-Stock

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$8.553

100+ parts

$8.125

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$7.698

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1,107

$8.553

$8.125

$7.698

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AZTECH Wire

Italy . 884 parts In-Stock

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$13.116

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One Stop Electronics

USA . 197 parts In-Stock

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$40.000

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Microchip USA

USA . 2,304 parts In-Stock

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Corphita

USA . 1,778 parts In-Stock

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Overview

Discover the SN74AUC08RGYRG4 by Texas Instruments, a high-quality logic gate that offers unparalleled performance and reliability. With Texas Instruments' reputation for excellence in manufacturing, this product is guaranteed to exceed expectations. Ideal for a wide range of applications, this logic gate provides fast propagation delay and low power consumption, making it a cost-effective solution for your project. Trust Texas Instruments to deliver cutting-edge technology that will elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures the product is robust and can withstand various environmental conditions.

Propagation Delay At Nominal Supply: 3.4 ns

The low propagation delay ensures quick response times, making this product suitable for high-speed applications.

Surface Mount: YES

The surface mount capability makes installation and PCB assembly easy and efficient.

No. of Functions: 4

With multiple functions in one component, this product offers space-saving advantages in circuit designs.

No. of Inputs: 2

Having multiple inputs allows for more complex logic operations to be performed.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a low supply voltage of 1.2V helps in reducing power consumption and heat dissipation.

Load Capacitance (CL): 15 pF

The low load capacitance ensures minimal interference and improved signal integrity.

Maximum Operating Temperature: 85 °C

The wide operating temperature range makes this product suitable for industrial applications where temperature variations are common.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, making this product energy efficient and reliable.

Maximum Power Supply Current (ICC): 0.01 mA

The low power supply current consumption further enhances the energy efficiency of this product.

Technical Specifications

Logic Gates SN74AUC08RGYRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

S-PQCC-N14

JESD-609 Code:

e4

Length:

3.5 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

9 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3.4 ns

Propagation Delay (tpd):

3.4 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.5 mm

Trade Compliance

SN74AUC08RGYRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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