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SN74AHC1G86DBVRE4

Texas Instruments

SN74AHC1G86DBVRE4 by Texas Instruments

SN74AHC1G86DBVRE4 by Texas Instruments is a logic gate with 2 inputs, 10 ns propagation delay, and 16.5 ns tpd. It operates at a supply voltage of 3.3V and is ideal for automotive applications due to its low profile package style and wide temperature range from -40°C to 125°C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 36,240 parts In-Stock

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Vyrian

USA . 4,907 parts In-Stock

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Digiode

USA . 3,833 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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Parana Technologies

USA . 2,255 parts In-Stock

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$8.530

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$9.187

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$8.530

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$9.187

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DigiPath Technology Company

USA . 1,682 parts In-Stock

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$9.392

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1,682

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ChromeModa Solutions

Germany . 3,203 parts In-Stock

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$9.584

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$7.859

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$9.584

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IDEA Electronic Components Group

UK . 1,059 parts In-Stock

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$9.584

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$9.105

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$8.626

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Semicontronic

India . 1,182 parts In-Stock

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$15.000

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$14.625

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$14.550

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AZTECH Wire

Italy . 655 parts In-Stock

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$19.789

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Corohmni

South Africa . 198 parts In-Stock

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$26.847

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Ampacity Inc.

Singapore . 1,334 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$31.172

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$29.613

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One Stop Electronics

USA . 1,014 parts In-Stock

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$37.000

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Perfect Parts

USA . 19,420 parts In-Stock

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Continental Prestige Electronics

USA . 5,913 parts In-Stock

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Corphita

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Argo Parts USA

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Microchip USA

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the exceptional quality and reliability of Texas Instruments with the SN74AHC1G86DBVRE4 Logic Gate. This versatile component is ideal for a wide range of applications, offering fast propagation delays and a high output current. With a small outline package and low profile design, this logic gate is perfect for space-constrained projects. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your designs with the SN74AHC1G86DBVRE4 and experience the value and performance that only TI can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the logic gate, ensuring a longer lifespan and reliable performance.

Propagation Delay At Nominal Supply: 10 ns

Fast propagation delay allows for quick signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount compatibility makes installation easy and convenient, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard supply voltage of 3.3V, compatible with most electronic systems and devices.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and layout, accommodating various connection configurations.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, improving overall efficiency and reliability of the logic gate.

Technical Specifications

Logic Gates SN74AHC1G86DBVRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

16.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74AHC1G86DBVRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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