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SN74AHC1G32DCKTE4

Texas Instruments

SN74AHC1G32DCKTE4 by Texas Instruments

SN74AHC1G32DCKTE4 by Texas Instruments is a CMOS logic gate with 2 inputs, 8.5 ns propagation delay, and 50 pF load capacitance. It operates at a supply voltage range of 2-5.5 V and has a max power supply current of 0.01 mA. Ideal for automotive applications due to its small outline package style and dual terminal position.

Median Price

$1.078

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 250 parts In-Stock

1+ parts

$1.890

100+ parts

$0.893

1k+ parts

$0.506

10k+ parts

$0.464

250

$1.890

$0.893

$0.506

$0.464

Avnet

USA . 750 parts In-Stock

1+ parts

-

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-

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$0.267

750

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$0.267

Distributors (In-Stock)

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Vyrian

USA . 8,445 parts In-Stock

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8,445

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Digiode

USA . 4,771 parts In-Stock

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4,771

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Nova Conductors

Japan . 16 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 220 parts In-Stock

1+ parts

$4.000

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220

$4.000

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AZTECH Wire

Italy . 268 parts In-Stock

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$9.592

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$9.592

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Ampacity Inc.

Singapore . 1,228 parts In-Stock

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$24.000

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$24.000

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Parana Technologies

USA . 865 parts In-Stock

1+ parts

$30.060

100+ parts

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$66.585

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865

$30.060

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$66.585

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DigiPath Technology Company

USA . 1,635 parts In-Stock

1+ parts

$33.100

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1,635

$33.100

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ChromeModa Solutions

Germany . 840 parts In-Stock

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$33.775

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$27.696

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840

$33.775

$27.696

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IDEA Electronic Components Group

UK . 835 parts In-Stock

1+ parts

$33.775

100+ parts

$32.086

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$30.398

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835

$33.775

$32.086

$30.398

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Continental Prestige Electronics

USA . 5,932 parts In-Stock

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Microchip USA

USA . 1,597 parts In-Stock

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Argo Parts USA

USA . 1,313 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 434 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the SN74AHC1G32DCKTE4 logic gate. This versatile component is perfect for a wide range of applications, offering seamless integration and high performance. With a compact design and advanced technology, this product provides exceptional value and benefits to customers looking for top-notch solutions. Trust Texas Instruments for cutting-edge innovation and superior products that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, suitable for a variety of applications.

Propagation Delay at Nominal Supply: 8.5 ns

With a low propagation delay, this logic gate can quickly process signals, making it ideal for time-sensitive operations.

Surface Mount: YES

The surface mount feature allows for easy integration onto circuit boards, saving space and facilitating efficient assembly processes.

No. of Inputs: 2

Having two inputs allows for more complex logic operations to be performed, increasing the versatility of this gate.

Nominal Supply Voltage: 3.3V

Operating at a common supply voltage of 3.3V, this gate is compatible with many standard electronic systems.

Load Capacitance: 50 pF

The ability to handle a load capacitance of 50 pF ensures stable operation in various circuit configurations.

Power Supplies: 2/5.5V

With a wide range of power supply voltages supported, this logic gate is adaptable to different operating conditions.

No. of Terminals: 5

The compact design with five terminals conserves space on PCBs, making it suitable for tight layouts.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile of the package enhance the ease of placement and the efficient use of board space.

Maximum I (ol): 8 Amp

The high output current capability of 8 Amps ensures this gate can drive demanding loads without issues.

Propagation Delay (tpd): 13 ns

Although slightly higher than the nominal value, the propagation delay of 13 ns is still within acceptable limits for most applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range of up to 125°C allows for reliable performance in harsh environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in board layout and ensures stable electrical connections.

Maximum Seated Height: 1.1 mm

The low seated height of 1.1 mm reduces the overall profile of the component, ideal for space-constrained designs.

Width: 1.25 mm

The narrow width of 1.25 mm allows for a compact footprint on the PCB, suitable for densely populated circuit boards.

Minimum Supply Voltage: 2V

The low minimum supply voltage requirement of 2V enables operation in low-power applications or with limited power sources.

Peak Reflow Temperature: 260C

The high peak reflow temperature of 260°C ensures secure and reliable solder joints during assembly processes.

Length: 2 mm

The short length of 2 mm further contributes to the compact form factor of this logic gate, saving space in electronic devices.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade designation indicates that this product meets stringent requirements for operation in automotive applications.

Technology: CMOS

The CMOS technology used in this logic gate offers a good balance between power consumption, speed, and noise immunity.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering and provides secure mechanical connections during assembly.

Packing Method: TR

The TR packing method ensures safe handling and storage of the components during shipping and distribution.

Terminal Pitch: 0.65 mm

The fine terminal pitch of 0.65 mm allows for precise placement on the PCB and supports high-density interconnections.

Maximum Supply Voltage: 5.5V

Operating within a maximum supply voltage of 5.5V, this logic gate can withstand voltage fluctuations without compromising performance.

Maximum Power Supply Current: 0.01 mA

With a low maximum power supply current of 0.01 mA, this gate consumes minimal power, making it energy-efficient.

Technical Specifications

Logic Gates SN74AHC1G32DCKTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74AHC1G32DCKTE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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