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SN74AHC1G04DCKTE4

Texas Instruments

SN74AHC1G04DCKTE4 by Texas Instruments

SN74AHC1G04DCKTE4 by Texas Instruments is a CMOS logic gate with 8.5 ns propagation delay at 3.3V, suitable for automotive applications. It features a small outline package with dual terminals and operates b/w -40 to 125°C temperature range. With a max power supply current of 0.01 mA, it offers high performance in a compact form factor for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 283,550 parts In-Stock

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Vyrian

USA . 6,723 parts In-Stock

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Digiode

USA . 2,801 parts In-Stock

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Nova Conductors

Japan . 20 parts In-Stock

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AZTECH Wire

Italy . 303 parts In-Stock

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$13.651

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$13.651

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Parana Technologies

USA . 487 parts In-Stock

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$21.232

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$21.532

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DigiPath Technology Company

USA . 834 parts In-Stock

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$23.379

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834

$23.379

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ChromeModa Solutions

Germany . 1,726 parts In-Stock

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$23.856

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$19.562

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IDEA Electronic Components Group

UK . 1,243 parts In-Stock

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$23.856

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$22.663

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$21.470

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Ampacity Inc.

Singapore . 1,477 parts In-Stock

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$48.000

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Semicontronic

India . 1,140 parts In-Stock

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$59.475

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$59.170

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One Stop Electronics

USA . 1,543 parts In-Stock

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Continental Prestige Electronics

USA . 6,465 parts In-Stock

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Microchip USA

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Corphita

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Argo Parts USA

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Aranea Global

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Overview

Enhance the efficiency of your electronic circuits with the SN74AHC1G04DCKTE4 by Texas Instruments, a high-quality logic gate designed to meet the demands of various applications. With Texas Instruments' reputation for reliability and innovation, you can trust that this product delivers superior performance and durability. Whether you're working on automotive electronics or industrial automation systems, this logic gate offers fast propagation delay and low power consumption, making it a valuable addition to your projects. Upgrade your designs today with the SN74AHC1G04DCKTE4 and experience unmatched quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable design, making it ideal for various applications.

Propagation Delay At Nominal Supply: 8.5 ns

With a low propagation delay, this logic gate offers fast signal processing, improving overall system performance.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, making installation and maintenance hassle-free.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient space utilization, making it suitable for compact electronic devices.

Nominal Supply Voltage: 3.3 V

Operates at a standard supply voltage, compatible with many other components, providing versatility in use.

Load Capacitance: 50 pF

The low load capacitance helps in reducing signal distortion and improving signal integrity.

Maximum I (ol): 8 Amp

With a high maximum output current, this logic gate can drive larger loads without any issues.

Propagation Delay: 12 ns

Although slightly higher than other values, the propagation delay is still low enough for fast signal processing.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for industrial and automotive environments.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures, ensuring reliability in various conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers more flexibility in circuit board layout and connection options.

Maximum Seated Height: 1.1 mm

A slim profile with a low seated height makes it suitable for applications with space constraints.

Width: 1.25 mm

Compact width allows for high-density mounting, saving space on the circuit board.

Minimum Supply Voltage: 2 V

Can operate at low supply voltages, providing energy efficiency and flexibility in power sources.

Peak Reflow Temperature: 260 C

Can withstand high reflow temperatures during manufacturing processes without damage.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications with the ability to withstand harsh environmental conditions.

Technology: CMOS

Utilizes CMOS technology, offering low power consumption and high noise immunity.

Terminal Form: GULL WING

Gull wing terminal form provides ease of soldering and secure connections.

Packing Method: TR

Taped and reeled packing method facilitates automated manufacturing processes and component handling.

Terminal Pitch: 0.65 mm

The small terminal pitch allows for high-density mounting on circuit boards.

Maximum Supply Voltage: 5.5 V

Can operate at high supply voltages, offering compatibility with a wide range of systems.

Maximum Power Supply Current: 0.01 mA

Consumes minimal power, making it suitable for battery-powered applications.

Technical Specifications

Logic Gates SN74AHC1G04DCKTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

SN74AHC1G04DCKTE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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