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SN74AHC14QDRG4Q1

Texas Instruments

SN74AHC14QDRG4Q1 by Texas Instruments

SN74AHC14QDRG4Q1 by Texas Instruments is a CMOS logic gate with 6 functions, 12 ns propagation delay at 3.3V. It is AEC-Q100 qualified for automotive applications, featuring Schmitt Trigger and operating temperature range of -40 to 125°C. Suitable for surface mount assembly with small outline package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,584 parts In-Stock

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Digiode

USA . 1,281 parts In-Stock

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AZTECH Wire

Italy . 304 parts In-Stock

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$10.624

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One Stop Electronics

USA . 172 parts In-Stock

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Parana Technologies

USA . 1,036 parts In-Stock

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$23.727

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DigiPath Technology Company

USA . 207 parts In-Stock

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$26.127

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ChromeModa Solutions

Germany . 3,326 parts In-Stock

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$26.660

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IDEA Electronic Components Group

UK . 683 parts In-Stock

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$26.660

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$25.327

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Microchip USA

USA . 1,896 parts In-Stock

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Corphita

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Overview

Unlock the potential of your automotive applications with the SN74AHC14QDRG4Q1 by Texas Instruments. With Texas Instruments' reputation for high-quality products, this logic gate offers reliable performance and durability. Ideal for automotive environments, this logic gate features a Schmitt Trigger and AEC-Q100 screening level. Experience fast propagation delay and low power consumption, making it a valuable addition to your design. Trust Texas Instruments for innovative solutions that drive your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring long-term reliability.

Propagation Delay At Nominal Supply: 12 ns

The low propagation delay ensures fast signal processing, making this product suitable for applications requiring high-speed operation.

Surface Mount: YES

Surface mount compatibility allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

No. of Functions: 6

Having multiple functions in a single package increases the efficiency and reduces the overall component count in a circuit design.

Screening Level: AEC-Q100

This automotive-grade screening level ensures that the logic gates meet strict quality and reliability standards for automotive applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V makes these logic gates suitable for a wide range of digital circuit designs that operate at this voltage level.

Load Capacitance (CL): 50 pF

The load capacitance of 50 pF allows for efficient and stable operation of the logic gates when connected to external components.

Power Supplies (V): 2/5.5

The wide range of power supply voltages (2V to 5.5V) ensures compatibility with various power sources, making these logic gates versatile in different applications.

No. of Terminals: 14

Having 14 terminals provides flexibility in connecting the logic gates to other components in a circuit, allowing for complex designs and functions.

Maximum I (ol): 8 Amp

The high maximum output current of 8A ensures that the logic gates can drive heavy loads without any risk of damage or malfunction.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40°C to 125°C makes these logic gates suitable for use in extreme temperature environments without any performance degradation.

Technical Specifications

Logic Gates SN74AHC14QDRG4Q1 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

18.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74AHC14QDRG4Q1 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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