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SN74AHC04QDRG4

Texas Instruments

SN74AHC04QDRG4 by Texas Instruments

SN74AHC04QDRG4 by Texas Instruments is a logic gate with 6 functions, 8.5 ns propagation delay at 3.3V supply voltage, and 50 pF load capacitance. It is used in automotive applications due to its CMOS technology, operating temperature range of -40 to 125 °C, and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,137 parts In-Stock

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Vyrian

USA . 3,664 parts In-Stock

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3,664

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Distributors (Availability)

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Parana Technologies

USA . 2,248 parts In-Stock

1+ parts

$7.642

100+ parts

-

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$8.161

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2,248

$7.642

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$8.161

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ChromeModa Solutions

Germany . 5,877 parts In-Stock

1+ parts

$8.587

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$7.041

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$8.587

$7.041

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IDEA Electronic Components Group

UK . 2,181 parts In-Stock

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$8.587

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$8.158

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$7.728

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2,181

$8.587

$8.158

$7.728

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AZTECH Wire

Italy . 848 parts In-Stock

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$11.677

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848

$11.677

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One Stop Electronics

USA . 1,295 parts In-Stock

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$36.000

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1,295

$36.000

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Component Stockers USA

USA . 550 parts In-Stock

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$99.990

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550

$99.990

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Corphita

USA . 2,316 parts In-Stock

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Microchip USA

USA . 2,173 parts In-Stock

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DigiPath Technology Company

USA . 646 parts In-Stock

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$7.742

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646

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$7.742

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Overview

Discover the exceptional quality and reliability of the SN74AHC04QDRG4 Logic Gates by Texas Instruments. Designed to deliver superior performance in a compact package, this product offers fast propagation delay and a wide operating temperature range, making it ideal for automotive applications. With six functions in one, this logic gate provides unmatched value and efficiency for your projects. Trust Texas Instruments for cutting-edge technology that meets your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the logic gates, making them suitable for various environmental conditions.

Propagation Delay At Nominal Supply: 8.5 ns

Low propagation delay ensures quick signal processing, making these logic gates efficient for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and improving overall design efficiency.

No. of Functions: 6

Having multiple functions in a single device reduces the need for additional components, simplifying circuit design and reducing costs.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common supply voltage, ensuring compatibility with a wide range of systems and devices.

Load Capacitance (CL): 50 pF

The specified load capacitance helps in determining the power consumption and speed of the logic gates, allowing for efficient performance.

Maximum Supply Voltage (Vsup): 5.5 V

The wide range of supply voltage allows flexibility in usage, accommodating different power requirements in various applications.

Technical Specifications

Logic Gates SN74AHC04QDRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74AHC04QDRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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