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SN74AHC00PWRE4

Texas Instruments

SN74AHC00PWRE4 by Texas Instruments

SN74AHC00PWRE4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 8.5 ns at 3.3V, making it suitable for automotive applications due to its wide operating temperature range of -40 to 125°C and small package size (5x4.4mm).

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 29,290 parts In-Stock

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Vyrian

USA . 5,114 parts In-Stock

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Digiode

USA . 1,490 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 256 parts In-Stock

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$3.000

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256

$3.000

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Corohmni

South Africa . 495 parts In-Stock

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$11.268

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AZTECH Wire

Italy . 472 parts In-Stock

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$13.164

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Semicontronic

India . 773 parts In-Stock

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$15.000

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$14.625

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$14.550

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773

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Parana Technologies

USA . 320 parts In-Stock

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$25.871

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$26.469

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DigiPath Technology Company

USA . 62 parts In-Stock

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$28.487

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$26.208

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ChromeModa Solutions

Germany . 4,946 parts In-Stock

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$29.068

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IDEA Electronic Components Group

UK . 1,327 parts In-Stock

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One Stop Electronics

USA . 1,524 parts In-Stock

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Continental Prestige Electronics

USA . 4,637 parts In-Stock

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Argo Parts USA

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Corphita

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Microchip USA

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Perfect Parts

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Bastille Electronics

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Overview

Experience unparalleled performance and reliability with the SN74AHC00PWRE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-quality logic gates that are essential for various applications. Whether you're designing automotive systems or working on industrial projects, this product offers unmatched value with its low propagation delay and high-speed operation. Trust Texas Instruments for cutting-edge technology that delivers exceptional results every time. Elevate your designs with the SN74AHC00PWRE4 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 8.5 ns

The low propagation delay of 8.5 ns at nominal supply voltage allows for fast operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

The surface mount feature enables easy and efficient installation of the logic gates on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage is within a common range for many electronic devices, making these logic gates compatible with a wide range of applications.

Technology: CMOS

CMOS (complementary metal-oxide-semiconductor) technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates SN74AHC00PWRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74AHC00PWRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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