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SN54S51J

Texas Instruments

SN54S51J by Texas Instruments

SN54S51J by Texas Instruments is a TTL logic gate with 4 inputs, 2 functions, and a propagation delay of 5.5 ns at 5V. It operates in military-grade temperatures from -55 to 125 °C and has a max power supply current of 22 mA. Ideal for applications requiring fast signal processing in harsh environments.

Median Price

$15.488

Lifecycle Status

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1k+

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Rochester

USA . 129 parts In-Stock

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$12.390

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$11.080

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$10.430

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DigiKey

USA . 129 parts In-Stock

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$16.300

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Verical

USA . 115 parts In-Stock

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$15.488

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$13.850

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$13.037

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$13.037

Distributors (In-Stock)

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Freelance Electronics

USA . 7 parts In-Stock

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$5.120

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$5.376

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$5.069

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$5.120

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Digiode

USA . 1,236 parts In-Stock

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$11.372

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Vyrian

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Electronic Expediters

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ComSIT Distribution GmbH

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DigiKey Marketplace

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Component Sense

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LWI Electronics Inc

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R&J Components

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ECAB

Sweden . 50 parts In-Stock

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Holdelec - ElecDif-Pro

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Pegasus Components GmbH

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Electronics Depot

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ICP Electronique

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Corphita

USA . 2,262 parts In-Stock

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$10.773

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Parana Technologies

USA . 1,800 parts In-Stock

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$19.936

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$19.884

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$19.936

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$19.884

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DigiPath Technology Company

USA . 1,075 parts In-Stock

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$21.952

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$20.196

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IDEA Electronic Components Group

UK . 1,569 parts In-Stock

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$22.400

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$21.280

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$20.160

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ChromeModa Solutions

Germany . 7 parts In-Stock

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$18.368

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Microchip USA

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Kepictronics

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Overview

Experience top-notch performance and reliability with the SN54S51J logic gate from Texas Instruments. Known for their exceptional quality, Texas Instruments delivers cutting-edge solutions for a wide range of applications. The SN54S51J offers fast propagation delay, low power consumption, and high precision, making it ideal for military-grade projects. With Texas Instruments' renowned expertise and this advanced logic gate, you can trust in unmatched value and seamless functionality for all your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the logic gates, ensuring a longer lifespan for the product.

Propagation Delay at Nominal Supply: 5.5 ns

Low propagation delay ensures fast operation and response times for the logic gates, making them suitable for high-speed applications.

No. of Functions: 2

Having multiple functions in a single component can reduce the overall complexity and size of the circuit design, making it more efficient.

Screening Level: MIL-STD-883

This screening level ensures that the logic gates meet stringent military standards for reliability and performance.

Minimum Operating Temperature: -55 °C

The wide temperature range allows the product to operate in harsh environments or extreme conditions without compromising performance.

Technology: TTL

TTL technology is known for its high-speed operation and low power consumption, making it a reliable choice for logic gates in various applications.

Technical Specifications

Logic Gates SN54S51J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

ANOTHER FUNCTION HAS 6 INPUT

Family:

S

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

-.4 Amp

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

22 mA

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

5.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-STD-883

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN54S51J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-039-4752, 5962010394752, 5962-01-486-3166, 5962014863166

NIIN

010394752, 014863166

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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